Tunneling criteria and breakdown for low resistive magnetic tunnel junctions

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1783-1786

  Oliver, Bryan ^a   He, Qing ^a   Tang, Xuefei ^a   Nowak, Janusz ^a  

^a SEAGATE TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TUNNELING;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

TUNNEL JUNCTIONS;

EID: 0042011226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590064     Document Type: Article

References (11)

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10. B. Oliver, Q. He, X. Tang, and J. Nowak (unpublished).
11. SHORT. This value was obtained from extrapolation of junction resistance having large pinhole. However, when the pinhole is very conductive we cannot neglect resistances of all the layers above and below it. Consequently, this estimation is actually the upper limit of the pinhole area.