Continuous thin barriers for low-resistance spin-dependent tunnel junctions

Journal of Applied Physics

Volumn 93, Issue 10 3, 2003, Pages 8367-8369

  Wang, Jianguo ^a   Liu, Yaowen ^b   Freitas, P P ^a,b   Snoeck, E ^c   Martins, J L ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC RESISTANCE; HAFNIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

TUNNEL JUNCTION COUPLING FIELD;

TUNNEL JUNCTIONS;

EID: 0038316533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555972     Document Type: Conference Paper

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