Electron beam lithography for nanometer-scale planar double-gate transistors

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 206-211

  Weber, W ^a,b   Ilicali, G ^a,b   Kretz, J ^a   Dreeskornfeld, L ^a   Rosner W ^a   Hansch, W ^b   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Calixarene; Double gate MOSFET; Electron beam lithography; HSQ; Layer transfer; Wafer bonding

Indexed keywords

ANISOTROPY; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ETCHING; FABRICATION; MOSFET DEVICES; OPTICAL RESOLVING POWER; PATTERN RECOGNITION; SILICON;

CALIXARENE; DOUBLE-GATE MOSFET; HYDROGEN-SILESQUIOXANE (HSQ); LAYER TRANSFER; WAFER BONDING;

GATES (TRANSISTOR);

EID: 14944371212     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.028     Document Type: Conference Paper

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