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Volumn 11, Issue 6, 2004, Pages 569-575
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Contribution of n-type amorphous carbon on the fabrication of n-C:P/p-Si solar cells
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Author keywords
Carbon solar cell; Graphite target; Illumination; N type carbon; Phosphorus doped; Pulsed laser deposition; Quantum efficiency
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Indexed keywords
AMORPHOUS MATERIALS;
CURRENT DENSITY;
ENERGY CONVERSION;
GRAPHITE;
HETEROJUNCTIONS;
PHOSPHORUS;
PHOTOVOLTAIC CELLS;
SOLAR CELLS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC PERCENTAGE;
FILL FACTORS;
OPEN CIRCUIT VOLTAGE;
ROOM TEMPERATURE;
PULSED LASER DEPOSITION;
CARBON;
GRAPHITE;
PHOSPHORUS;
SILICON;
ARTICLE;
ATOM;
DENSITY;
ELECTRIC POTENTIAL;
ELECTRICAL EQUIPMENT;
ELECTRICITY;
ENERGY;
EXPOSURE;
FILM;
ILLUMINATION;
LASER;
OPTICS;
PERFORMANCE;
ROOM TEMPERATURE;
SHORT CIRCUIT CURRENT;
SOLAR CELL;
SOLID STATE;
WEIGHT;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 14844364368
PISSN: 0218625X
EISSN: None
Source Type: Journal
DOI: 10.1142/S0218625X04006578 Document Type: Article |
Times cited : (2)
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References (18)
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