Microstructure characterization of δ-Bi2O3 thin film under atmospheric pressure by means of halide CVD on c-sapphire

Journal of Crystal Growth

Volumn 275, Issue 3-4, 2005, Pages 460-466

  Takeyama, T ^a   Takahashi, N ^a   Nakamura, T ^a   Itoh, S ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ASAHI GLASS CO LTD   (Japan)

Author keywords

A1. Characterization; A1. X ray diffraction; A3. Chemical vapor deposition processes; B1. Bismuth compounds; B1. Halides; B1. Oxide

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; MICROSTRUCTURE; SAPPHIRE; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

CHEMICAL VAPOR DEPOSITION PROCESSES; CRYSTAL QUALITY; HALIDES; LATTICE MISMATCH;

THIN FILMS;

EID: 14844342834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.433     Document Type: Article

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