Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD

Journal of Physics and Chemistry of Solids

Volumn 65, Issue 7, 2004, Pages 1349-1352

  Takeyama, T ^a   Takahashi, N ^a   Nakamura, T ^a   Ito, S ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ASAHI GLASS CO LTD   (Japan)

Author keywords

A. Thin films

Indexed keywords

ATMOSPHERIC PRESSURE; BISMUTH COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DIFFRACTION; GLASS; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; THERMAL EFFECTS; VAPORS; X RAY DIFFRACTION;

CHEMICAL SPRAY PYROLYSIS; REACTIVE EVAPOURATION; WAVELENGTH;

THIN FILMS;

EID: 3242699507     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2004.03.006     Document Type: Article

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