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Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques

Volumn 96, Issue 2, 2005, Pages 197-206

Electrical activity of grain boundaries in polycrystalline silicon - Influences of grain boundary structure, chemistry and temperature

(5) Tsurekawa, Sadahiro a Kido, Kota a Hamada, Shu a Watanabe, Tadao a Sekiguchi, Takashi b

a TOHOKU UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Electrical activity; Electron beam induced current (ebic); Grain boundary; Hydrogen passivation; Silicon

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRON BEAMS; HYDROGENATION; MICROSTRUCTURE; OXIDATION; PASSIVATION; POLYSILICON; SOLAR CELLS; THIN FILM TRANSISTORS;

ELECTRICAL ACTIVITY; ELECTRON BEAM INDUCED CURRENT (EBIC); HYDROGEN PASSIVATION; TEMPERATURE DEPENDENCE;

GRAIN BOUNDARIES;

EID: 14844329043 PISSN: 00443093 EISSN: None Source Type: Journal
DOI: 10.3139/146.101020 Document Type: Article

Times cited : (8)

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