Theoretical study of grain boundaries in silicon: Features of atomic and electronic structures

Materials Science Forum

Volumn 207-209, Issue PART 1, 1996, Pages 265-268

  Kohyama, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Band Tail; Boundary Energy; Deep States; Rigid Body Translation; Structural Unit; Tight Binding Theory; Tilt Boundary; Twist Boundary

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS;

BOND TAIL; BOUNDARY ENERGY; COINCIDENCE TILT BOUNDARIES; DEEP STATES; RIGID BODY TRANSLATION; TIGHT BINDING CALCULATIONS; TWIST BOUNDARY;

SEMICONDUCTING SILICON;

EID: 0029733513     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.207-209.265     Document Type: Article

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