Low-energy STEM of multilayers and dopant profiles

Microscopy and Microanalysis

Volumn 11, Issue 1, 2005, Pages 97-104

  Merli, P G ^a   Morandi, V ^a  

^a CNR   (Italy)

Author keywords

Dopant profiles; Electron device investigation; Low energy STEM; Mass thickness contrast; Monte Carlo simulation; SE yield; Semiconductor multilayers; STEM

Indexed keywords

EID: 14744273034     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927605050063     Document Type: Article

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