Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 973-977

  Prendergast, James ^a   O'Driscoll, Eoin ^a   Mullen, Ed ^b  

^a Department of Chemistry   (Ireland)

^b ANALOG DEVICES   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; INTEGRATED CIRCUIT TESTING; MONTE CARLO METHODS; RELIABILITY; STATISTICAL METHODS; TRANSISTORS; WEIBULL DISTRIBUTION;

GATE OXIDE RELIABILITY; LOGNORMAL DISTRIBUTION; STATISTICAL DISTRIBUTION; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 14644432476     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.013     Document Type: Conference Paper

References (6)

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2. J.H. Stathis Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits IEEE/IRPS 2001 132 147
3. R. Degraeve, B. Kaczer, and G. Groeseneken Reliability: a possible showstopper for oxide thickness scaling? Semiconduct Sci Technol 15 2000 436 444
4. K. Croes, J. Manca, W. DeCeuninck, L. Deschepper, and G. Molenberghs The time of 'guessing' your failure time distribution is over Microelectron Reliab 38 1998 1187 1191
5. E. Wu, W. Abadeer, L.-K. Han, S.-H. Lo, and G. Hueckel Challenges for accurate reliability projections in the ultra-thin oxide regime IEEE/IRPS 1999 57 65
6. S. Cain Distinguishing between lognormal and Weibull distributions IEEE Trans Reliab 51 2002 32 38