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Volumn 5, Issue 2, 2005, Pages 219-222

Energy conversion efficiency in nanotube optoelectronics

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; NANOTUBE OPTOELECTRONICS; P-N JUNCTIONS; PHOTON ENERGY;

EID: 14644431740     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl048410z     Document Type: Article
Times cited : (63)

References (21)
  • 10
    • 14644393867 scopus 로고    scopus 로고
    • Castellini, O. M.; Marcus, M. S.; Simmons, J. M.; Eriksson, M. A. et al., in preparation
    • Castellini, O. M.; Marcus, M. S.; Simmons, J. M.; Eriksson, M. A. et al., in preparation. Markus M. S.; Castellini, O. M.; Simmons, J. M.; Hamers, R. J.; Eriksson, M. A. in preparation.
  • 11
    • 14644434623 scopus 로고    scopus 로고
    • Markus M. S.; Castellini, O. M.; Simmons, J. M.; Hamers, R. J.; Eriksson, M. A. in preparation
    • Castellini, O. M.; Marcus, M. S.; Simmons, J. M.; Eriksson, M. A. et al., in preparation. Markus M. S.; Castellini, O. M.; Simmons, J. M.; Hamers, R. J.; Eriksson, M. A. in preparation.
  • 14
    • 14644411297 scopus 로고    scopus 로고
    • note
    • 6 The presence of Schottky contacts would affect both the electronic transport and partitioning of the voltage drop between the contacts and the p-n junction. A full self-consistent calculation of a p-n junction with Schottky contacts would be required to properly include these effects.
  • 18
    • 84860102977 scopus 로고    scopus 로고
    • Stewart, D. A.; Léonard, F., unpublished
    • Stewart, D. A.; Léonard, F., unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.