Photoluminescence of epitaxial CuGaS2 on Si(1 1 1): Model for intrinsic defect levels

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 241-244

  Metzner, H ^a   Eberhardt, J ^a   Cieslak, J ^a   Hahn, Th ^a   Goldhahn, R ^b   Reislohner U ^a   Witthuhn, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

CuGaS2; MBE; Photoluminescence

Indexed keywords

ABSORPTION; DIFFRACTION; EPITAXIAL GROWTH; HEAT TREATMENT; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CUGAS2; SOLAR SPECTRUM;

COPPER COMPOUNDS;

EID: 1442360284     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.120     Document Type: Conference Paper

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