Surface morphology and ionization potentials of polar semiconductors: The case of GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 3, 2004, Pages

  Sgiarovello, C ^a   Binggeli, N ^b   Baldereschi, A ^a,c  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

AB INITIO CALCULATION; ARTICLE; ELECTRON TRANSPORT; IONIZATION; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; SEMICONDUCTOR; STOICHIOMETRY;

EID: 1442350652     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.035320     Document Type: Article

References (45)

1. H Hölz and F.K. Schulte, in Solid Surface Physics, edited by G. Höhler and E.A. Niekisch, Springer Tracts in Modern Physics, Vol. 85 (Springer-Verlag, Berlin, 1979).
2. A.G. Milnes, Semiconductor Devices and Integrated Electronics (Van Nostrand Reinhold, New York, 1980).
3. H.P. Bonzel, A.M. Bradshaw, and G. Ertl, (Elsevier, Amsterdam, 1989).
4. W.E. Spicer, Appl. Phys. 12, 115 (1977).
5. H. Tsuda and T. Mizutani, Appl. Phys. Lett. 60, 1570 (1992).
6. N. Inoue, T. Higashino, K. Tanahashi, and Y. Kawamura, J. Cryst. Growth 227-228, 123 (2001).
7. T. Higashino, J. Osaka, K. Tanahashi, M. Kikuchi, Y. Kawamura, N. Inoue, and Y. Homma, J. Cryst. Growth 209, 431 (2000).
8. W. Chen, M. Dumas, D. Mao, and A. Kahn, J. Vac. Sci. Technol. B 10, 1886 (1992).
9. R. Duszak, C.J. Palmstrom, L.T. Florez, Y.-N. Yang, and J.H. Weaver, J. Vac. Sci. Technol. B 10, 1891 (1992).
10. J. Massies, P. Devoldere, and N.T. Linh, J. Vac. Sci. Technol. 16, 1244 (1979).
11. W. Ranke, Phys. Rev. B 27, 7807 (1983).
12. M.D. Paschley, Phys. Rev. B 40, 10 481 (1989).
13. L. Adamowicz and M. Zbroszczyk, Surf. Sci. 377-379, 247 (1997).
14. J-L.A. Alves, J. Hebenstreit, and M. Scheffler, Phys. Rev. B 44, 6188 (1991).
15. G-X. Qian, R.M. Martin, and D.J. Chadi, Phys. Rev. B 37, 1303 (1988).
16. W.G. Schmidt and F. Bechstedt, Phys. Rev. B 54, 16 742 (1996).
17. D.M. Ceperley and B.J. Alder, Phys. Rev. Lett. 45, 566 (1980).
18. N. Troullier and J.L. Martins, Phys. Rev. B 43, 1993 (1991).
19. L. Kleinman and D.M. Bylander, Phys. Rev. Lett. 48, 1425 (1982).
20. J.R. Chelikowsky, M. Schlüter, S.G. Louie, and M.L. Cohen, Solid State Commun. 17, 1103 (1975).
21. C. Sgiarovello, N. Binggeli, and A. Baldereschi, Phys. Rev. B 64, 195305 (2001).
22. C.J. Fall, N. Binggeli, and A. Baldereschi, J. Phys.: Condens. Matter 11, 2689 (1999).
23. C. Berthod, N. Binggeli, and A. Baldereschi, Europhys. Lett. 36, 67 (1996).
24. N. Binggeli, P. Ferrara, and A. Baldereschi, Phys. Rev. B 63, 245306 (2001).
25. C.J. Fall, N. Binggeli, and A. Baldereschi, Phys. Rev. B 66, 075405 (2002).
26. H.J. Monkhorst and J.D. Pack, Phys. Rev. B 13, 5188 (1976).
27. G. Harbeke, O. Madelung, and U. Rössler, in Semiconductors: Physics of Group IV Elements and III-V Compounds, edited by O. Madelung and Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer-Verlag, Berlin, 1982), p. 220.
28. R.J. Needs, J.P. Charlesworth, and R.W. Godby, Europhys. Lett. 25, 31 (1994).
29. J. Bardi, N. Binggeli, and A. Baldereschi, Phys. Rev. B 59, 8054 (1999).
30. D.K. Bielgelsen, R.D. Bringans, J.E. Northrup, and L.E. Swartz, Phys. Rev. B 41, 5701 (1990).
31. D.J. Chadi, J. Vac. Sci. Technol. A 5, 834 (1987).
32. J.E. Northrup and S. Froyen, Phys. Rev. Lett. 71, 2276 (1993);
33. J.E. Northrup, S. Froyen, Phys. Rev. B 50, 2015 (1994).
34. S.-H. Lee, W. Moritz, and M. Scheffler, Phys. Rev. Lett. 85, 3890 (2000).
35. M. Tmar, A. Gabriel, C. Chatillon, and I. Ansara, J. Cryst. Growth 69, 421 (1984).
36. G.-X. Qian, R.M. Martin, and D.J. Chadi, Phys. Rev. Lett. 60, 1962 (1988).
37. T. Ohno, Phys. Rev. Lett. 70, 631 (1993).
38. K. Hirose, E. Foxman, T. Noguchi, and M. Uda, Phys. Rev. B 41, 6076 (1990).
39. G.M. Guichar, C.A. Sebenne, and G.A. Garry, Phys. Rev. Lett. 37, 1158 (1976).
40. J. van Laar, A. Huijser, and T.L. van Rooy, J. Vac. Sci. Technol. 14, 894 (1977).
41. T.-C. Chiang, J.A. Knapp, M. Aono, and D.E. Eastman, Phys. Rev. B 21, 3513 (1980).
42. R. Smoluchowski, Phys. Rev. 60, 661 (1941).
43. S. Baroni, R. Resta, A. Baldereschi, and M. Peressi, in Spectroscopy of Semiconductor Microstructures, Vol. 26 of NATO Advanced Studies Institute Series B: Physics, edited by G. Fasol, A. Fasolino, and P. Luigi (Plenum, New York, 1989), p. 251;
44. M. Peressi, N. Binggeli, and A. Baldereschi, J. Phys. D 31, 1273 (1998).
45. A. Ruini, R. Resta, and S. Baroni, Phys. Rev. B 57, 5742 (1998).