Work function of GaAs (0 0 1) surface obtained by the electron counting model

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 123-126

  Inoue, N ^a   Higashino, T ^a   Tanahashi, K ^a   Kawamura, Y ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

A1. Scanning electron microscopy; A1. Surface structure; A1. Work function; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III V compounds

Indexed keywords

MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; SURFACE TREATMENT;

ELECTRON COUNTING MODEL; WORK FUNCTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035398898     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00649-2     Document Type: Conference Paper

References (7)