Passive Mode Locking of InAlGaAs 1.3-μm Strained Quantum Wells Extended Cavity Laser Fabricated by Quantum-Well Intermixing

IEEE Photonics Technology Letters

Volumn 16, Issue 2, 2004, Pages 374-376

  Robert, Franck ^a   Bryce, A Catrina ^a   Marsh, John H ^b   SpringThorpe, Anthony J ^c,d   White, J Kenton ^c,e  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Intense Ltd   (United Kingdom)

^c NORTEL NETWORKS   (Canada)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e Bookham Technology   (Canada)

Author keywords

AlGaInAs; Loss; Mode locked lasers; Passive; Pulse generation; Quantum well intermixing (QWI); Semiconductor lasers

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; LASER MODE LOCKING; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTODIODES; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPUTTERING; WAVEGUIDES;

ALGAINAS; MODE LOCKED LASERS; PULSE GENERATION; QUANTUM WELL INTERMIXING (QWI);

SEMICONDUCTOR QUANTUM WELLS;

EID: 1442337623     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.823134     Document Type: Article

References (11)

1. W. D. Laidig, N. Holonyak, M. D. Camras, Jr., K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, "Disorder of an AlAs-GaAs superlattice by impurity," Appl. Phys. Lett., vol. 38, pp. 776-778, 1981.
2. B. Tell, J. Shah, P. M. Thomas, J. W. Sulhoff, K. F. Brown-Goebler, A. D. Giovanni, B. I. Miller, and U. Koren, "Phosphorous ion implantation induced intermixing of InGaAs/InP quantum well structures," Appl. Phys. Lett., vol. 38, pp. 1570-1572, 1989.
3. J. E. Epler, F. A. Ponce, F. K. J. Endicott, and T. L. Paoli, "Laser disordering of GaAs/AlGaAs by diffusion of laser incorporated Si," J. Appl. Phys., vol. 55, pp. 3439-3444, 1988.
4. O. P. Kowalski, C. J. Hamilton, S. D. M. Dougall, J. H. Marsh, A. C. Bryce, R. M. De La Rue, B. Vogele, C. R. Stanley, C. C. Button, and J. S. Roberts, "A universal damage induced technique for quantum well intermixing," Appl. Phys. Lett., vol. 72, pp. 581-583, 1998.
5. F. Camacho, E. A. Avrutin, P. Cusumano, A. S. Helmy, A. C. Bryce, and J. H. Marsh, "Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing," IEEE Photon. Technol. Lett., vol. 9, pp. 1208-1210, Sept. 1997.
6. D. J. Derickson, R. J. Helkey, A. Mar, J. D. Karin, J. G. Wasserbauer, and J. E. Bowers, "Short pulse generation using multisegment mode-locked semiconductor lasers," IEEE J. Quantum Electron., vol. 28, pp. 2186-2202, Oct. 1992.
7. A. J. SpringThorpe, T. Garanzotis, P. Paddon, G. Pakulski, and J. K. White, "Strained 1.3 μm MWQ AlGaInAs lasers grown by digital alloy MBE," Electron. Lett., vol. 36, pp. 1031-1032, 2000.
8. S. D. Me Dougall, O. P. Kowalski, C. J. Hamilton, F. Camacho, B. Qiu, M. Ke, R. De La Rue, A. C. Bryce, and J. H. Marsh, "Monolithic integration via a universal damage enhanced quantum-well intermixing technique," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 636-646, July/Aug. 1998.
9. E. J. Skogen,. J. S. Barthon, S. P. Denbaars, and L. A. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 863-869, July/Aug. 2002.
10. J. Piprek, J. K. White, and A. J. SpringThorpe, "What limits the maximum output power of long-wavelength AlGaInAs-InP laser diodes?," IEEE J. Quantum Electron., vol. 38, pp. 1253-1259, Sept. 2002.
11. F. R. Laugthon, J. H. Marsh, D. A. Barrow, and E. L. Portnoi, "The two-photon absorption semiconductor waveguide autocorrelator," IEEE J. Quantum Electron., vol. 30, pp. 838-845, Mar. 1994.