PECVD of hydrogenated silicon thin films from SiH4+H 2+Si2H6 mixtures

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 255-258

  Hammad, A ^a   Amanatides, E ^a   Mataras, D ^a   Rapakoulias, D ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

Disilane; Glow discharge; Microcrystalline silicon; PECVD; Silane

Indexed keywords

FILM GROWTH; GLOW DISCHARGES; INTERFEROMETRY; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICON; THERMAL EFFECTS; VACUUM;

DISILANE; MICROCRYSTALLINE SILICON;

THIN FILMS;

EID: 1442286776     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.123     Document Type: Conference Paper

References (8)

1. N. Wyrch, P. Torres, M. Goetz, S. Dubail, L. Feitknecht, J. Cuperus, A. Shah, B. Rech, O. Kluth, S. Wieder, O. Vetterl, H. Stiebig, C. Beneking, H. Wagner, Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, vol. I, Vienna, July 1998, 467.
2. Torres P., Keppner H., Meier J., Kroll U., Beck N., Shah A. Rapid Res. Notes: Phys. Status Solidi. 1997;97.
3. Kondo M., Fukawa M., Guo L., Matsuda A. J. Non-Cryst. Solids. 266-269:2000;84.
4. Futako W., Takagi T., Nishimoto T., Kondo M., Shimizu I., Matsuda A. Jpn. J. Appl. Phys. 38:1999;4535.
5. A. Hammad, E. Amanatides, D. Mataras, submitted to J. Vac. Sci. Tech. A.
6. Spiliopoulos N., Mataras D., Rapakoulias D.E. J. Vac. Sci. Technol. A. 14:1996;2757.
7. Krishnakumar E., Srivastava S.K. Contrib. Plasma Phys. 6:1995;395.
8. Amanatides E., Rapakoulias D.E., Mataras D. J. Phys. IV. 11:2001;Pr3.715-722.