Gas phase diagnosis of disilane/hydrogen RF glow discharge plasma and its application to high rate growth of high quality amorphous silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4535-4537

  Futako, Wataru ^a   Takagi, Tomoko ^b   Nishimoto, Tomonori ^b   Kondo, Michio ^b   Shimizu, Isamu ^a   Matsuda, Akihisa ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRODES; FILM PREPARATION; FLOW MEASUREMENT; HYDROGEN; MASS SPECTROMETRY; MOLECULES; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTIONS; SILANES; STABILITY;

DISILANE; FLOW RATE RATIO; GAS PHASE DIAGNOSIS; GROWTH RATE; HYDROGEN DILUTION TECHNIQUE; QUADRUPOLE MASS SPECTROMETER; RF GLOW DISCHARGE; RF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY JUNCTIONS;

PLASMAS;

EID: 0033157662     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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