Near band-gap emission in V-implanted and annealed 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 497-500

  Henry, A ^a,b   Egilsson, T ^a   Ivanov, I G ^a   Harris, C I ^c   Savage, S ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

D2 Center; Ion Implantation; Photoluminescence; Vanadium

Indexed keywords

ANNEALING; ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; VANADIUM;

NEAR BANDGAP EMISSION;

SILICON CARBIDE;

EID: 3743074878     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.497     Document Type: Article

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