Changes in the exciton-related photoluminescence of 4H- and 6H-SiC induced by uniaxial stress

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 489-492

  Ivanov, I G ^a   Lindefelt, U ^a,b   Henry, A ^a,b   Egilsson, T ^a   Kordina, O ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Bound Excitons; Free Excitons; Photoluminescence; Stress

Indexed keywords

ELECTRON EMISSION; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; STRESSES;

UNIAXIAL STRESS;

SILICON CARBIDE;

EID: 3743085031     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.489     Document Type: Article

References (5)

1. Ch. Haberstroh, R. Helbig, and S. Leibenzeder, In Amorphous and Crystalline Silicon Carbide IV, Springer Proceedings in Physics, Vol.71, Springer-Verlag Berlin Heidelberg 1992, p.221.
2. Ch. Haberstroh, R. Helbig, and R.A. Stein, Appl. Phys., 76(1), p.509(1994)
3. L.L. Clemen, W.J. Choyke, R.P. Devaty, J.A. Powell, and H.S. Kong, in Amorphous and Crystalline Silicon Carbide IV, ed. by C.Y. Yang, M.M. Rahman, and G.L. Harris, Springer Proceedings in Physics, Vol. 71 (Springer, Berlin, 1992), p.105-115.
4. A. Henry, C. Hallin, I.G. Ivanov, J.P. Bergman, O. Kordina, U. Lindefelt, and E. Janzén, Phys. Rev. B, 53(16), p.13503(1996).
5. P.J. Colwell and M.V. Klein, Phys. Rev. B, 6(2), p.498(1972).