Infrared spectroscopy of Si-O bonding in low-dose low-energy separation by implanted oxygen materials

Thin Solid Films

Volumn 476, Issue 2, 2005, Pages 303-311

  Jutarosaga, Tula ^a   Jeoung, Jun Sik ^a   Seraphin, Supapan ^a  

^a University of Arizona   (United States)

Author keywords

Infrared spectroscopy; Separation by implanted oxygen materials; Silicon oxide; Transmission electron microscopy

Indexed keywords

ANNEALING; CURRENT DENSITY; DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; OXYGEN; RAMAN SCATTERING; SILICON WAFERS; STOICHIOMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE (BOX); LOW-ENERGY SEPARATION; SEPARATION BY IMPLANTED OXYGEN MATERIALS; SILICON OXIDES;

SILICON COMPOUNDS;

EID: 13844272476     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.10.006     Document Type: Article

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