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Volumn 13, Issue 5, 2002, Pages 303-308

Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEFECTS; ION IMPLANTATION; MICROSTRUCTURE; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036575669     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1015528226182     Document Type: Article
Times cited : (4)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.