Organic field-effect transistor with narrow channel fabricated using focused ion beam

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 12 B, 2004, Pages

  Yanagi, Hisao ^a   Kawai, Yasufumi ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Focused ion beam; Hole mobility; Narrow channel; Organic field effect transistor; Pentacene; Vapor deposited film

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRODES; ETCHING; FABRICATION; GOLD; HOLE MOBILITY; ION BEAMS; IONS; IRRADIATION; SEMICONDUCTING GALLIUM; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION;

FOCUSED ION BEAMS; NARROW CHANNEL; ORGANIC FIELD-EFFECT TRANSISTORS; PENTACENE; VAPOR-DEPOSITED FILMS;

FIELD EFFECT TRANSISTORS;

EID: 13744256983     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1575     Document Type: Article

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