Effects of the plasma oxygen concentration on the formation of SiOxCy films by low temperature PECVD

Surface and Coatings Technology

Volumn 194, Issue 1, 2005, Pages 42-47

  Lasorsa, C ^a   Morando, P J ^b   Rodrigo, A ^a  

^a CENTRO ATÓMICO CONSTITUYENTES   (Argentina)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

Author keywords

Fourier transform infrared spectroscopy; Optical emission spectroscopy; Organosilicon monomers; PACVD; Silanol; Silicon oxide films

Indexed keywords

CONCENTRATION (PROCESS); DEHYDRATION; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCARBONATES; REACTION KINETICS; SILANES; SILICON COMPOUNDS; SUBSTRATES;

PLASMA OXYGEN CONCENTRATION; POLYCARBONATE SUBSTRATES; REACTION RATES; THERMAL SHOCKS;

COATINGS;

COATING;

EID: 13644283846     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.05.003     Document Type: Article

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