|
|
Volumn , Issue , 1997, Pages 605-608
|
|
Analysis of heterojunction interband tunneling diodes for MMICs
a a a a a |
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ALUMINUM COMPOUNDS;
CAPACITANCE;
CIRCUIT OSCILLATIONS;
DIODES;
EQUIVALENT CIRCUITS;
GALLIUM COMPOUNDS;
HETEROJUNCTIONS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
INTEGRATED CIRCUIT MANUFACTURE;
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;
OSCILLISTORS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR ALLOYS;
SEMICONDUCTOR DOPING;
TRANSMISSION ELECTRON MICROSCOPY;
TUNNEL DIODE OSCILLATORS;
TUNNEL DIODES;
VARIABLE FREQUENCY OSCILLATORS;
CAPACITANCE VOLTAGE;
EXPONENTIAL DEPENDENCE;
GROWTH OPTIMIZATION;
INTER-BAND TUNNELING DIODES;
NEGATIVE DIFFERENTIAL RESISTANCES;
OXYGEN BACKGROUND CONCENTRATION;
PEAK CURRENT DENSITY;
PEAK TO VALLEY CURRENT RATIO;
TUNING;
|
|
EID: 77956017890
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISCS.1998.711750 Document Type: Conference Paper |
|
Times cited : (5)
|
|
References (9)
|
