Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 701-703

  Jang, Kee Youn ^a   Sugaya, Takeyoshi ^b   Hahn, Cheol Koo ^b   Ogura, Mutsuo ^b   Komori, Kazuhiro ^b   Shinoda, Akito ^c   Yonei, Kenji ^c  

^a JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTOR QUANTUM WIRES;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

FIELD EFFECT TRANSISTORS;

EID: 0041511951     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595150     Document Type: Article

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