Memory effects of ion-beam synthesized ge and si nanoclusters in thin sio2 - layers

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 375-379

  Gebel, T ^a   Von Borany, J ^a   Skorupa', W ^a   Moller W ^a   Thees, H J ^b   Wittmaack, M ^b   Stegemann, K H ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Zentrum Mikroelektronik Dresden GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ION BEAMS; MOS CAPACITORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SYNTHESIS (CHEMICAL);

ION-BEAM SYNTHESIS;

SEMICONDUCTING FILMS;

EID: 0034503808     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. S. Tiwari, F. Rana, K. Chan, L. Shi, H. Hanafi, W. Chan and D. Buchanan, Tech. Dig. ffiDM (1995), 521.
2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, Appl. Phys. Lett. 68 (10) (1996), 1232.
3. H.I. Hanafi, S. Tiwari and I. Khan, IEEE Transaction on Electron Devices, Vol. 43 (9), (1996), 1553.
4. J. von Borany, B. Schmidt, K.-H. Heinig, H.-J. Thees, K.-H. Stegemann, Microelectronic Engineering, 48 (1999), 231.
5. J. von Borany, B. Schmidt, K.-H. Heinig, M. Kiimenkov, K.-H. Stegemann, H.-J. Thees, this Conference
6. H.-J. Thees, M.Wittmaack, K.-H. Stegemann, J. von Borany, K.-H. Heinig, T. Gebelp lOth Workshop on Dielectrics, Barcelona, 3-5th Nov. 1999, to be published in Microelectronics Reliability