Ballistic transport in InSb mesoscopic structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 455-459

  Goel, N ^a,b   Graham, J ^a,b   Keay, J C ^a   Suzuki, K ^b   Miyashita, S ^b   Santos, M B ^a,b,c   Hirayama, Y ^b,c  

^a UNIVERSITY OF OKLAHOMA   (United States)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ballistic transport; Bend resistance; InSb; Mesoscopic structures; Quantum point contact

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; HALL EFFECT; INDIUM COMPOUNDS; MAGNETIC FIELDS; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

BALLISTIC TRANSPORT; BEND RESISTANCE; INSB; MESOSCOPIC STRUCTURES; QUANTUM POINT CONTACTS;

ELECTRON TRANSPORT PROPERTIES;

EID: 13444278823     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.080     Document Type: Conference Paper

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