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Volumn 19, Issue 3, 2002, Pages 451-462

Applications of Atomic Layer Chemical Vapor Deposition for the Processing of Nanolaminate Structures

Author keywords

Atomic Layer Chemical Vapor Deposition; Capacitor Dielectric Thin Film; Gate Oxide; Nano Deposition; Self limiting Chemisorption

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; DIELECTRIC FILMS; FILM GROWTH; LAMINATES; MULTILAYERS; SUBSTRATES; SURFACE REACTIONS; THIN FILMS;

EID: 0141731355     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02697156     Document Type: Article
Times cited : (18)

References (98)
  • 3
    • 0034825377 scopus 로고    scopus 로고
    • Phase Transformations in Hafnium Dioxide Thin Films Grown by Atomic Layer Deposition at High Temperatures
    • Aarik, J., Aidla, A., Mandar, M., Uuslare, T., Kukli, K. and Schuisky, M. "Phase Transformations in Hafnium Dioxide Thin Films Grown by Atomic Layer Deposition at High Temperatures," Applied Surface Science, 173, 15 (2001).
    • (2001) Applied Surface Science , vol.173 , pp. 15
    • Aarik, J.1    Aidla, A.2    Mandar, M.3    Uuslare, T.4    Kukli, K.5    Schuisky, M.6
  • 9
    • 21544472489 scopus 로고
    • In Situ Observation of Indium Segregation by Reflectance Difference Spectroscopy in Single Monolayer Heterostructures Grown by Atomic Layer Epitaxy
    • Ares, R., Tran, C. A. and Walkins S. P., "In Situ Observation of Indium Segregation by Reflectance Difference Spectroscopy in Single Monolayer Heterostructures Grown by Atomic Layer Epitaxy," Appl Phys. Lett., 67, 1576 (1995).
    • (1995) Appl Phys. Lett. , vol.67 , pp. 1576
    • Ares, R.1    Tran, C.A.2    Walkins, S.P.3
  • 19
    • 0030218562 scopus 로고    scopus 로고
    • Surface Chemistry for Atomic Layer Growth
    • George, S. M., Ott, A. W. and Klaus, J. W., "Surface Chemistry for Atomic Layer Growth," J. Phys. Chem., 100, 13121 (1996).
    • (1996) J. Phys. Chem. , vol.100 , pp. 13121
    • George, S.M.1    Ott, A.W.2    Klaus, J.W.3
  • 20
    • 0034855299 scopus 로고    scopus 로고
    • Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
    • Gordon, R. G., Becker, J., Hausmann, D. and Sub, S., "Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics," Chem. Mater., 13, 2463 (2001).
    • (2001) Chem. Mater. , vol.13 , pp. 2463
    • Gordon, R.G.1    Becker, J.2    Hausmann, D.3    Sub, S.4
  • 21
    • 0031224604 scopus 로고    scopus 로고
    • Advanced Materials Processing by Adsorption Control
    • Haukka, Suvi and Suntola, Tuorno, "Advanced Materials Processing by Adsorption Control," Interface Science, 5, 119 (1997).
    • (1997) Interface Science , vol.5 , pp. 119
    • Haukka, S.1    Tuorno, S.2
  • 22
    • 0034224461 scopus 로고    scopus 로고
    • Study on the Characteristics of TiN Thin Film Deposited by the Atomic Layer Chemical Vapor Deposition Method
    • Jeon, H., Lee, J. W., Kim, Y. D., Kim, D. S. and Yi, K. S., "Study on the Characteristics of TiN Thin Film Deposited by the Atomic Layer Chemical Vapor Deposition Method," J. Vac. Sci. Technol. A, 18, 1595 (2000).
    • (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 1595
    • Jeon, H.1    Lee, J.W.2    Kim, Y.D.3    Kim, D.S.4    Yi, K.S.5
  • 23
    • 0035062293 scopus 로고    scopus 로고
    • Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
    • Jeong, C. W., Lee, J. S. and Joo, S. K., "Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films," Jpn. J. Appl. Phys., 40, 285 (2001).
    • (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 285
    • Jeong, C.W.1    Lee, J.S.2    Joo, S.K.3
  • 25
    • 0031523650 scopus 로고    scopus 로고
    • Deposition of Copper Films by an Alternate Supply of CuCl and Zn
    • Juppo, M., Ritala, M. and Leskela, M., "Deposition of Copper Films by an Alternate Supply of CuCl and Zn," Vac. Sci. Technol. A, 15, 2330 (1997).
    • (1997) Vac. Sci. Technol. A , vol.15 , pp. 2330
    • Juppo, M.1    Ritala, M.2    Leskela, M.3
  • 26
    • 0034275371 scopus 로고    scopus 로고
    • Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition Metal Nitride Thin Films
    • Juppo, M., Ritala, M. and Leskela, M., "Use of 1, 1-Dimethylhydrazine in the Atomic Layer Deposition Metal Nitride Thin Films," J. Electrochem. Soc., 147, 3377 (2000).
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 3377
    • Juppo, M.1    Ritala, M.2    Leskela, M.3
  • 29
    • 44849118044 scopus 로고
    • Adsorption and Decomposition of Diethylsiline and Diethylgermane on Si(100): Surface Reactions for an Atomic Layer Epitaxial Approach to Column IV Epitaxy
    • Kellerman, B. K., Mahajan, A., Russell, N. M., Ekerdt, J. G., Banerjee, S. K., Tasch, A. F., Campion, A, White, J. M. and Bonser, D. J., "Adsorption and Decomposition of Diethylsiline and Diethylgermane on Si(100): Surface Reactions for an Atomic Layer Epitaxial Approach to Column IV Epitaxy," J. Vac. Sci. Technol. A, 13, 1819 (1995).
    • (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 1819
    • Kellerman, B.K.1    Mahajan, A.2    Russell, N.M.3    Ekerdt, J.G.4    Banerjee, S.K.5    Tasch, A.F.6    Campion, A.7    White, J.M.8    Bonser, D.J.9
  • 32
    • 0006729091 scopus 로고    scopus 로고
    • Barium Titanate Thin Films Prepared on MgO(100) Substrates by Coating-Pyrolysis Process
    • Kim, S. W. and Kwon, O. Y., "Barium Titanate Thin Films Prepared on MgO(100) Substrates by Coating-Pyrolysis Process," Korean J. Chem. Eng., 16, 40 (1999).
    • (1999) Korean J. Chem. Eng. , vol.16 , pp. 40
    • Kim, S.W.1    Kwon, O.Y.2
  • 34
    • 0000763519 scopus 로고    scopus 로고
    • Atomic Layer Controlled Growth of SiO Films using Binary Reaction Sequence Chemistry
    • Klaus, J. W., Ott, A. W., Johnson, J. M. and George, S. M., "Atomic Layer Controlled Growth of SiO Films using Binary Reaction Sequence Chemistry," Phys. Lett., 70, 1092 (1997).
    • (1997) Phys. Lett. , vol.70 , pp. 1092
    • Klaus, J.W.1    Ott, A.W.2    Johnson, J.M.3    George, S.M.4
  • 35
    • 0034247007 scopus 로고    scopus 로고
    • Atomically Controlled Growth of Tungsten and Tungsten Nitride using Sequential Surface Reactions
    • Klaus, J. W., Ferro, S. J. and George, S. M., "Atomically Controlled Growth of Tungsten and Tungsten Nitride using Sequential Surface Reactions," Applied Surface Science, 162-163, 479 (2000).
    • (2000) Applied Surface Science , vol.162-163 , pp. 479
    • Klaus, J.W.1    Ferro, S.J.2    George, S.M.3
  • 36
    • 0033891630 scopus 로고    scopus 로고
    • Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions
    • Klaus, J. W., Ferro, S. J. and George, S. M., "Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions," J. Electrochem. Soc., 147, 1175 (2000).
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 1175
    • Klaus, J.W.1    Ferro, S.J.2    George, S.M.3
  • 37
    • 0030563213 scopus 로고    scopus 로고
    • In Situ Monitoring of the GaAs Growth Process in Halogen Transport Atomic Layer Epitaxy
    • Koukitu, A., Takahashi, N. and Seki, H., "In Situ Monitoring of the GaAs Growth Process in Halogen Transport Atomic Layer Epitaxy," J. Cryst. Growth, 163, 180 (1996).
    • (1996) J. Cryst. Growth , vol.163 , pp. 180
    • Koukitu, A.1    Takahashi, N.2    Seki, H.3
  • 42
    • 0033808389 scopus 로고    scopus 로고
    • Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride
    • Kukli, K., Ritala, M. and Leskela, M., "Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride," Chem. Mater., 12, 1914 (2000).
    • (2000) Chem. Mater. , vol.12 , pp. 1914
    • Kukli, K.1    Ritala, M.2    Leskela, M.3
  • 45
    • 0002058460 scopus 로고    scopus 로고
    • Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials
    • Kukli, K., Ritala, M. and Leskela, M., "Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials," J. Electrochem. Soc., 148, F35 (2001).
    • (2001) J. Electrochem. Soc. , vol.148
    • Kukli, K.1    Ritala, M.2    Leskela, M.3
  • 49
    • 0000103059 scopus 로고    scopus 로고
    • Reaction of Dimethylamine Alane and Ammonia on Si(100) during the Atomic Layer Growth of AlN: Static SIMS, TPSIMS, and TPD
    • Kuo, J. and Rogers, Jr., J., "Reaction of Dimethylamine Alane and Ammonia on Si(100) during the Atomic Layer Growth of AlN: Static SIMS, TPSIMS, and TPD," Surface Science, 453, 119 (2000).
    • (2000) Surface Science , vol.453 , pp. 119
    • Kuo, J.1    Rogers J., Jr.2
  • 51
    • 0000413858 scopus 로고    scopus 로고
    • Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition
    • Lim, J. W., Park, H. S. and Kang, S. W., "Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition," J. Electrochem. Soc., 148, C403 (2001).
    • (2001) J. Electrochem. Soc. , vol.148
    • Lim, J.W.1    Park, H.S.2    Kang, S.W.3
  • 52
    • 0002747573 scopus 로고
    • Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films
    • Leskela, M. and Ritala, M., "Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films," J. Phys. IV, 5, C5-937 (1995).
    • (1995) J. Phys. IV , vol.5
    • Leskela, M.1    Ritala, M.2
  • 53
    • 0342520837 scopus 로고    scopus 로고
    • ALD Precursor Chemistry: Evolution and Future Challenges
    • Leskela, M. and Ritala, M., "ALD Precursor Chemistry: Evolution and Future Challenges," J. Phys. IV France, 9, Pr8-837 (1999).
    • (1999) J. Phys. IV France , vol.9
    • Leskela, M.1    Ritala, M.2
  • 54
    • 0032027307 scopus 로고    scopus 로고
    • In Situ Investigation of the Surface Chemistry of Atomic-Layer Epitaxial Growth of II-VI Semiconductor Thin Films
    • Luo, Y., Slater, D., Han, M., Moryl, J. and Osgood, R. M., "In Situ Investigation of the Surface Chemistry of Atomic-Layer Epitaxial Growth of II-VI Semiconductor Thin Films," Langmuir, 14, 1493 (1998).
    • (1998) Langmuir , vol.14 , pp. 1493
    • Luo, Y.1    Slater, D.2    Han, M.3    Moryl, J.4    Osgood, R.M.5
  • 57
    • 0034296258 scopus 로고    scopus 로고
    • The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metailorganic Atomic Layer Deposition of Ti-Si-N Thin Films
    • Min, J. S., Park, J. S., Park, H. S. and Kang S. W., "The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metailorganic Atomic Layer Deposition of Ti-Si-N Thin Films," J. Electrochem. Soc., 147, 3868 (2000).
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 3868
    • Min, J.S.1    Park, J.S.2    Park, H.S.3    Kang, S.W.4
  • 60
    • 0035897237 scopus 로고    scopus 로고
    • Formation and Stability of Lanthanum Oxide Thin Films Deposited from -Diketonate Precursor
    • Nieminen, M., Putkonen, M. and Niinisto, L., "Formation and Stability of Lanthanum Oxide Thin Films Deposited from -Diketonate Precursor," Applied Surface Science, 174, 155 (2001).
    • (2001) Applied Surface Science , vol.174 , pp. 155
    • Nieminen, M.1    Putkonen, M.2    Niinisto, L.3
  • 61
    • 0041822817 scopus 로고    scopus 로고
    • Synthesis of Oxide Thin Films and Overlayers By Atomic Layer Epitaxy for Advanced Applications
    • Niinisto, L., Ritala, M. and Leskela, M., "Synthesis of Oxide Thin Films and Overlayers By Atomic Layer Epitaxy for Advanced Applications," Materials science & Engineering B, 41, 23 (1996).
    • (1996) Materials Science & Engineering B , vol.41 , pp. 23
    • Niinisto, L.1    Ritala, M.2    Leskela, M.3
  • 62
    • 0032784780 scopus 로고    scopus 로고
    • Thin Film Deposition of Lanthanum Manganite Perovskite by the ALE Process
    • Nilsen, O., Peussa, M., Fjellvag, H., Niinisto, L. and Kjekshus, A., "Thin Film Deposition of Lanthanum Manganite Perovskite by the ALE Process," J. Mater. Chem., 9, 1781 (1999).
    • (1999) J. Mater. Chem. , vol.9 , pp. 1781
    • Nilsen, O.1    Peussa, M.2    Fjellvag, H.3    Niinisto, L.4    Kjekshus, A.5
  • 64
    • 0035323475 scopus 로고    scopus 로고
    • Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitride Using Hydrogen Radicals as a Reducing Agent
    • Park, J. S., Lee, M. J., Lee, C. S. and Kang, S. W., "Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitride Using Hydrogen Radicals as a Reducing Agent," Electrochemical and Solid-Stale Letters, 4, C17 (2001).
    • (2001) Electrochemical and Solid-Stale Letters , vol.4
    • Park, J.S.1    Lee, M.J.2    Lee, C.S.3    Kang, S.W.4
  • 67
    • 0034839628 scopus 로고    scopus 로고
    • In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water
    • Rahtu, A., Kukli, K. and Ritala, M., "In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water," Chem. Mater., 13, 817 (2001).
    • (2001) Chem. Mater. , vol.13 , pp. 817
    • Rahtu, A.1    Kukli, K.2    Ritala, M.3
  • 68
    • 0343390442 scopus 로고    scopus 로고
    • In Situ Characterization of Atomic Layer Deposition Process by a Mass Spectrometer
    • Ritala, M., Juppo, M., Kukli, K., Rahtu, A. and Leskela, M., "In Situ Characterization of Atomic Layer Deposition Process by a Mass Spectrometer," J. Phys. IV France, 9, Pr8-I021 (1999).
    • (1999) J. Phys. IV France , vol.9
    • Ritala, M.1    Juppo, M.2    Kukli, K.3    Rahtu, A.4    Leskela, M.5
  • 69
    • 0031546895 scopus 로고    scopus 로고
    • Advanced ALE Process of Amorphous and Polycrystalline Films
    • Ritala, M., "Advanced ALE Process of Amorphous and Polycrystalline Films," Applied Surface Science, 112, 223 (1997).
    • (1997) Applied Surface Science , vol.112 , pp. 223
    • Ritala, M.1
  • 71
    • 0032682630 scopus 로고    scopus 로고
    • Atomic Layer Epitaxy-a Valuable Tool for Nanotechnology?
    • Ritala, M. and Leskela, M., "Atomic Layer Epitaxy-a Valuable Tool for Nanotechnology?," Nanotechnology, 10, 19 (1999).
    • (1999) Nanotechnology , vol.10 , pp. 19
    • Ritala, M.1    Leskela, M.2
  • 72
    • 0028517695 scopus 로고
    • Development of Crystallinity and Morphology in Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy
    • Ritala, M. and Leskela, M., "Development of Crystallinity and Morphology in Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy," Thin Solid Films, 250, 72 (1994).
    • (1994) Thin Solid Films , vol.250 , pp. 72
    • Ritala, M.1    Leskela, M.2
  • 73
    • 0000646519 scopus 로고
    • Titanium Iso propoxide as a Precursor in Atomic Layer Epitaxy of Titanium Oxide Thin Films
    • Ritala, M., Leskela, M., Niinisto, L. and Haussalo, P., "Titanium Iso propoxide as a Precursor in Atomic Layer Epitaxy of Titanium Oxide Thin Films," Chem. Mater., 5, 1174 (1994).
    • (1994) Chem. Mater. , vol.5 , pp. 1174
    • Ritala, M.1    Leskela, M.2    Niinisto, L.3    Haussalo, P.4
  • 76
    • 0032182068 scopus 로고    scopus 로고
    • Highly Stable ZnO Thin Films by Atomic Layer Deposition
    • Sang, B., Yamada, A. and Konagai, M., "Highly Stable ZnO Thin Films by Atomic Layer Deposition," J. Appl. Phys., 37, L1125 (1998).
    • (1998) J. Appl. Phys. , vol.37
    • Sang, B.1    Yamada, A.2    Konagai, M.3
  • 77
    • 0032000824 scopus 로고    scopus 로고
    • Textured ZnO Thin Films for Solar Cells Grown by a Two-Step Process with the Atomic Layer Deposition Technique
    • Sang, B., Yamada, A. and Konagai, M., "Textured ZnO Thin Films for Solar Cells Grown by a Two-Step Process with the Atomic Layer Deposition Technique," Jpn. J. Appl. Phys., 37, L206 (1998).
    • (1998) Jpn. J. Appl. Phys. , vol.37
    • Sang, B.1    Yamada, A.2    Konagai, M.3
  • 82
    • 0002572435 scopus 로고
    • Atomic Layer Epitaxy
    • Suntola, T., "Atomic Layer Epitaxy," Thin Solid Films, 216, 84 (1992).
    • (1992) Thin Solid Films , vol.216 , pp. 84
    • Suntola, T.1
  • 84
    • 0030564312 scopus 로고    scopus 로고
    • Surface Chemistry of Materials Deposition at Atomic Layer Level
    • Suntola, T., "Surface Chemistry of Materials Deposition at Atomic Layer Level," Applied Surface Science, 100-101, 391 (1996).
    • (1996) Applied Surface Science , vol.100-101 , pp. 391
    • Suntola, T.1
  • 89
    • 0031546852 scopus 로고    scopus 로고
    • Atomic Layer Deposition of ZnO Transparent Conducting Oxides
    • Yamada, A., Sang, B. and Konagai, M., "Atomic Layer Deposition of ZnO Transparent Conducting Oxides," Applied Surface Science, 112, 216 (1997).
    • (1997) Applied Surface Science , vol.112 , pp. 216
    • Yamada, A.1    Sang, B.2    Konagai, M.3
  • 90
    • 0037479200 scopus 로고    scopus 로고
    • Atomic Layer by Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring
    • Yamamoto, S. and Oda, S., "Atomic Layer by Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring," Chem. Vap. Deposition, 7, 7 (2001).
    • (2001) Chem. Vap. Deposition , vol.7 , pp. 7
    • Yamamoto, S.1    Oda, S.2
  • 92
    • 0030167492 scopus 로고    scopus 로고
    • Monolayer Thickness in Atomic Layer Deposition
    • Ylliammi, M., "Monolayer Thickness in Atomic Layer Deposition, " Thin Solid Films, 279, 124 (1996).
    • (1996) Thin Solid Films , vol.279 , pp. 124
    • Ylliammi, M.1
  • 93
    • 0033886407 scopus 로고    scopus 로고
    • Study of Atomic Layer Epitaxy of Zinc Oxide by In-Situ Quartz Crystal Microgravimetry
    • Yousfi, E. B., Fouache, J. and Lincot, D., "Study of Atomic Layer Epitaxy of Zinc Oxide by In-Situ Quartz Crystal Microgravimetry," Applied Surface Science, 153, 223 (2000).
    • (2000) Applied Surface Science , vol.153 , pp. 223
    • Yousfi, E.B.1    Fouache, J.2    Lincot, D.3
  • 94
    • 0031553457 scopus 로고    scopus 로고
    • Experimental and Theoretical Study of Step Coverage in Metal Organic Chemical Vapor Deposition of Tantalum Oxide Thin Film
    • Yun, J. H. and Rhee, S. W., "Experimental and Theoretical Study of Step Coverage in Metal Organic Chemical Vapor Deposition of Tantalum Oxide Thin Film," Thin Solid Films, 292, 324 (1997).
    • (1997) Thin Solid Films , vol.292 , pp. 324
    • Yun, J.H.1    Rhee, S.W.2
  • 95
    • 0032681877 scopus 로고    scopus 로고
    • Comparison of Tetrakis-dimethyl-amido-titanium and Tetrakis-diethyl-amido-titanium Precursor Used in Titanium Nitride (TiN) Metal-Organic Chemical Vapor Deposition
    • Yun, J. Y., Park, M. Y. and Rhee, S. W., "Comparison of Tetrakis-dimethyl-amido-titanium and Tetrakis-diethyl-amido-titanium Precursor Used in Titanium Nitride (TiN) Metal-Organic Chemical Vapor Deposition," J. Electrochem. Soc., 146, 1804 (1999).
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 1804
    • Yun, J.Y.1    Park, M.Y.2    Rhee, S.W.3
  • 97
    • 0002305629 scopus 로고    scopus 로고
    • Atomic Layer Deposition of High Dielectric Constant Nanolaminates
    • Zhang, H. and Solanki, R., "Atomic Layer Deposition of High Dielectric Constant Nanolaminates," J. Electrochem. Soc., 148, F63 (2001).
    • (2001) J. Electrochem. Soc. , vol.148
    • Zhang, H.1    Solanki, R.2


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