-
2
-
-
0032653080
-
2 Thin Film
-
2 Thin Film," Thin Solid Films, 340, 110 (1999).
-
(1999)
Thin Solid Films
, vol.340
, pp. 110
-
-
Aarik, J.1
Aidla, A.2
Kiisler, A.3
Uustare, T.4
Sammelselg, V.5
-
3
-
-
0034825377
-
Phase Transformations in Hafnium Dioxide Thin Films Grown by Atomic Layer Deposition at High Temperatures
-
Aarik, J., Aidla, A., Mandar, M., Uuslare, T., Kukli, K. and Schuisky, M. "Phase Transformations in Hafnium Dioxide Thin Films Grown by Atomic Layer Deposition at High Temperatures," Applied Surface Science, 173, 15 (2001).
-
(2001)
Applied Surface Science
, vol.173
, pp. 15
-
-
Aarik, J.1
Aidla, A.2
Mandar, M.3
Uuslare, T.4
Kukli, K.5
Schuisky, M.6
-
9
-
-
21544472489
-
In Situ Observation of Indium Segregation by Reflectance Difference Spectroscopy in Single Monolayer Heterostructures Grown by Atomic Layer Epitaxy
-
Ares, R., Tran, C. A. and Walkins S. P., "In Situ Observation of Indium Segregation by Reflectance Difference Spectroscopy in Single Monolayer Heterostructures Grown by Atomic Layer Epitaxy," Appl Phys. Lett., 67, 1576 (1995).
-
(1995)
Appl Phys. Lett.
, vol.67
, pp. 1576
-
-
Ares, R.1
Tran, C.A.2
Walkins, S.P.3
-
11
-
-
0030165990
-
3 and ITO Thin Films Deposited by Atomic Layer Epitaxy
-
3 and ITO Thin Films Deposited by Atomic Layer Epitaxy," Applied Surface Science, 99, 91 (1996).
-
(1996)
Applied Surface Science
, vol.99
, pp. 91
-
-
Asikainen, T.1
Ritala, M.2
Leskela, M.3
Prohaska, T.4
Friedbacher, G.5
Grasserbauer, M.6
-
12
-
-
0031546858
-
3 Films by Benziyl Fluoride Pulses
-
3 Films by Benziyl Fluoride Pulses," Applied Surface Science, 112, 231 (1997).
-
(1997)
Applied Surface Science
, vol.112
, pp. 231
-
-
Asikainen, T.1
Ritala, M.2
Li, W.M.3
Lappalainen, R.4
Leskela, M.5
-
13
-
-
18844475626
-
2 Solar Cells
-
2 Solar Cells," Thin Solid Films, 361-362, 187 (2000).
-
(2000)
Thin Solid Films
, vol.361-362
, pp. 187
-
-
Canava, B.1
Guillemoles, J.-F.2
Yousfi, E.-B.3
Cowache, P.4
Kerber, H.5
Loeffl, A.6
Schock, H.-W.7
Powalla, M.8
Hariskos, D.9
Lincot, D.10
-
14
-
-
0032662406
-
+-Si Contact System
-
+-Si Contact System," Jpn. J. Appl. Phys., 38, 1343 (1999).
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 1343
-
-
Chang, K.M.1
Deng, I.C.2
Yen, T.H.3
Lain, K.D.4
Fu, C.M.5
-
19
-
-
0030218562
-
Surface Chemistry for Atomic Layer Growth
-
George, S. M., Ott, A. W. and Klaus, J. W., "Surface Chemistry for Atomic Layer Growth," J. Phys. Chem., 100, 13121 (1996).
-
(1996)
J. Phys. Chem.
, vol.100
, pp. 13121
-
-
George, S.M.1
Ott, A.W.2
Klaus, J.W.3
-
20
-
-
0034855299
-
Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
-
Gordon, R. G., Becker, J., Hausmann, D. and Sub, S., "Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics," Chem. Mater., 13, 2463 (2001).
-
(2001)
Chem. Mater.
, vol.13
, pp. 2463
-
-
Gordon, R.G.1
Becker, J.2
Hausmann, D.3
Sub, S.4
-
21
-
-
0031224604
-
Advanced Materials Processing by Adsorption Control
-
Haukka, Suvi and Suntola, Tuorno, "Advanced Materials Processing by Adsorption Control," Interface Science, 5, 119 (1997).
-
(1997)
Interface Science
, vol.5
, pp. 119
-
-
Haukka, S.1
Tuorno, S.2
-
22
-
-
0034224461
-
Study on the Characteristics of TiN Thin Film Deposited by the Atomic Layer Chemical Vapor Deposition Method
-
Jeon, H., Lee, J. W., Kim, Y. D., Kim, D. S. and Yi, K. S., "Study on the Characteristics of TiN Thin Film Deposited by the Atomic Layer Chemical Vapor Deposition Method," J. Vac. Sci. Technol. A, 18, 1595 (2000).
-
(2000)
J. Vac. Sci. Technol. A
, vol.18
, pp. 1595
-
-
Jeon, H.1
Lee, J.W.2
Kim, Y.D.3
Kim, D.S.4
Yi, K.S.5
-
23
-
-
0035062293
-
Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
-
Jeong, C. W., Lee, J. S. and Joo, S. K., "Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films," Jpn. J. Appl. Phys., 40, 285 (2001).
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 285
-
-
Jeong, C.W.1
Lee, J.S.2
Joo, S.K.3
-
25
-
-
0031523650
-
Deposition of Copper Films by an Alternate Supply of CuCl and Zn
-
Juppo, M., Ritala, M. and Leskela, M., "Deposition of Copper Films by an Alternate Supply of CuCl and Zn," Vac. Sci. Technol. A, 15, 2330 (1997).
-
(1997)
Vac. Sci. Technol. A
, vol.15
, pp. 2330
-
-
Juppo, M.1
Ritala, M.2
Leskela, M.3
-
26
-
-
0034275371
-
Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition Metal Nitride Thin Films
-
Juppo, M., Ritala, M. and Leskela, M., "Use of 1, 1-Dimethylhydrazine in the Atomic Layer Deposition Metal Nitride Thin Films," J. Electrochem. Soc., 147, 3377 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 3377
-
-
Juppo, M.1
Ritala, M.2
Leskela, M.3
-
27
-
-
0034844622
-
Atmospheric Pressure Atomic Layer Epitaxy of ZnO Using a Chlorine Source
-
Kaiya, K., Yoshii, N., Omichi, K., Takahashi, N., Nakamura, T., Okamoto, S. and Yamamoto, H., "Atmospheric Pressure Atomic Layer Epitaxy of ZnO Using a Chlorine Source," Chem. Mater., 13, 1952 (2001).
-
(2001)
Chem. Mater.
, vol.13
, pp. 1952
-
-
Kaiya, K.1
Yoshii, N.2
Omichi, K.3
Takahashi, N.4
Nakamura, T.5
Okamoto, S.6
Yamamoto, H.7
-
28
-
-
0001457892
-
Layered Tantalum-Aluminum Oxide Films Deposited by Atomic Layer Epitaxy
-
Katrelus, H., Ylilammi, M., Saarilahti, J., Antson, J. and Lindfors, S., "Layered Tantalum-Aluminum Oxide Films Deposited by Atomic Layer Epitaxy," Thin Solid Films, 225, 296 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 296
-
-
Katrelus, H.1
Ylilammi, M.2
Saarilahti, J.3
Antson, J.4
Lindfors, S.5
-
29
-
-
44849118044
-
Adsorption and Decomposition of Diethylsiline and Diethylgermane on Si(100): Surface Reactions for an Atomic Layer Epitaxial Approach to Column IV Epitaxy
-
Kellerman, B. K., Mahajan, A., Russell, N. M., Ekerdt, J. G., Banerjee, S. K., Tasch, A. F., Campion, A, White, J. M. and Bonser, D. J., "Adsorption and Decomposition of Diethylsiline and Diethylgermane on Si(100): Surface Reactions for an Atomic Layer Epitaxial Approach to Column IV Epitaxy," J. Vac. Sci. Technol. A, 13, 1819 (1995).
-
(1995)
J. Vac. Sci. Technol. A
, vol.13
, pp. 1819
-
-
Kellerman, B.K.1
Mahajan, A.2
Russell, N.M.3
Ekerdt, J.G.4
Banerjee, S.K.5
Tasch, A.F.6
Campion, A.7
White, J.M.8
Bonser, D.J.9
-
30
-
-
0034274290
-
Applicability of ALE TiN Films as Cu/Si Diffusion Barriers
-
Kim, D. J., Jung, Y. B., Lee, M. B., Lee, Y. H., Lee, J. H. and Lee, J. H., "Applicability of ALE TiN Films as Cu/Si Diffusion Barriers," Thin Solid Films, 372, 216 (2000).
-
(2000)
Thin Solid Films
, vol.372
, pp. 216
-
-
Kim, D.J.1
Jung, Y.B.2
Lee, M.B.3
Lee, Y.H.4
Lee, J.H.5
Lee, J.H.6
-
32
-
-
0006729091
-
Barium Titanate Thin Films Prepared on MgO(100) Substrates by Coating-Pyrolysis Process
-
Kim, S. W. and Kwon, O. Y., "Barium Titanate Thin Films Prepared on MgO(100) Substrates by Coating-Pyrolysis Process," Korean J. Chem. Eng., 16, 40 (1999).
-
(1999)
Korean J. Chem. Eng.
, vol.16
, pp. 40
-
-
Kim, S.W.1
Kwon, O.Y.2
-
33
-
-
0031362248
-
3 Films Grown by Atomic Layer Deposition
-
3 Films Grown by Atomic Layer Deposition," Appl. Phys. Lett., 71, 3604 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3604
-
-
Kim, Y.1
Lee, S.M.2
Park, C.S.3
Lee, S.I.4
Lee, M.Y.5
-
34
-
-
0000763519
-
Atomic Layer Controlled Growth of SiO Films using Binary Reaction Sequence Chemistry
-
Klaus, J. W., Ott, A. W., Johnson, J. M. and George, S. M., "Atomic Layer Controlled Growth of SiO Films using Binary Reaction Sequence Chemistry," Phys. Lett., 70, 1092 (1997).
-
(1997)
Phys. Lett.
, vol.70
, pp. 1092
-
-
Klaus, J.W.1
Ott, A.W.2
Johnson, J.M.3
George, S.M.4
-
35
-
-
0034247007
-
Atomically Controlled Growth of Tungsten and Tungsten Nitride using Sequential Surface Reactions
-
Klaus, J. W., Ferro, S. J. and George, S. M., "Atomically Controlled Growth of Tungsten and Tungsten Nitride using Sequential Surface Reactions," Applied Surface Science, 162-163, 479 (2000).
-
(2000)
Applied Surface Science
, vol.162-163
, pp. 479
-
-
Klaus, J.W.1
Ferro, S.J.2
George, S.M.3
-
36
-
-
0033891630
-
Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions
-
Klaus, J. W., Ferro, S. J. and George, S. M., "Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions," J. Electrochem. Soc., 147, 1175 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 1175
-
-
Klaus, J.W.1
Ferro, S.J.2
George, S.M.3
-
37
-
-
0030563213
-
In Situ Monitoring of the GaAs Growth Process in Halogen Transport Atomic Layer Epitaxy
-
Koukitu, A., Takahashi, N. and Seki, H., "In Situ Monitoring of the GaAs Growth Process in Halogen Transport Atomic Layer Epitaxy," J. Cryst. Growth, 163, 180 (1996).
-
(1996)
J. Cryst. Growth
, vol.163
, pp. 180
-
-
Koukitu, A.1
Takahashi, N.2
Seki, H.3
-
38
-
-
0000097220
-
Properties of Tantalum Oxide Thin Films Grown by Atomic Layer Deposition
-
Kukli, K., Aarik, J., Aidla, A., Kohan, O., Uustare, T. and Sammelselg, V., "Properties of Tantalum Oxide Thin Films Grown by Atomic Layer Deposition," Thin Solid Films, 260, 135 (1995).
-
(1995)
Thin Solid Films
, vol.260
, pp. 135
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Kohan, O.4
Uustare, T.5
Sammelselg, V.6
-
39
-
-
0031546947
-
2O
-
2O," Applied Surface Science, 112, 236 (1997).
-
(1997)
Applied Surface Science
, vol.112
, pp. 236
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Siimon, H.4
Ritala, M.5
Leskela, M.6
-
40
-
-
0034300887
-
2
-
2," Langmuir, 16, 8122 (2000).
-
(2000)
Langmuir
, vol.16
, pp. 8122
-
-
Kukli, K.1
Aidla, A.2
Aarik, J.3
Schuisky, M.4
Harsta, A.5
Ritala, M.6
Leskela, M.7
-
42
-
-
0033808389
-
Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride
-
Kukli, K., Ritala, M. and Leskela, M., "Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride," Chem. Mater., 12, 1914 (2000).
-
(2000)
Chem. Mater.
, vol.12
, pp. 1914
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
-
45
-
-
0002058460
-
Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials
-
Kukli, K., Ritala, M. and Leskela, M., "Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials," J. Electrochem. Soc., 148, F35 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
-
48
-
-
0031701182
-
Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy
-
Kukli, K., Ritala, M., Leakela, M. and Lappalainen, R., "Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy," Chem. Vap. Deposition, 4, 29 (1998).
-
(1998)
Chem. Vap. Deposition
, vol.4
, pp. 29
-
-
Kukli, K.1
Ritala, M.2
Leakela, M.3
Lappalainen, R.4
-
49
-
-
0000103059
-
Reaction of Dimethylamine Alane and Ammonia on Si(100) during the Atomic Layer Growth of AlN: Static SIMS, TPSIMS, and TPD
-
Kuo, J. and Rogers, Jr., J., "Reaction of Dimethylamine Alane and Ammonia on Si(100) during the Atomic Layer Growth of AlN: Static SIMS, TPSIMS, and TPD," Surface Science, 453, 119 (2000).
-
(2000)
Surface Science
, vol.453
, pp. 119
-
-
Kuo, J.1
Rogers J., Jr.2
-
50
-
-
0001277844
-
2
-
2," Langmuir, 13, 2717 (1997).
-
(1997)
Langmuir
, vol.13
, pp. 2717
-
-
Kytokivi, A.1
Lakomaa, E.L.2
Root, A.3
Osterholm, H.4
Jacobs, J.P.5
Brongersma, H.H.6
-
51
-
-
0000413858
-
Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition
-
Lim, J. W., Park, H. S. and Kang, S. W., "Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition," J. Electrochem. Soc., 148, C403 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
-
-
Lim, J.W.1
Park, H.S.2
Kang, S.W.3
-
52
-
-
0002747573
-
Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films
-
Leskela, M. and Ritala, M., "Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films," J. Phys. IV, 5, C5-937 (1995).
-
(1995)
J. Phys. IV
, vol.5
-
-
Leskela, M.1
Ritala, M.2
-
53
-
-
0342520837
-
ALD Precursor Chemistry: Evolution and Future Challenges
-
Leskela, M. and Ritala, M., "ALD Precursor Chemistry: Evolution and Future Challenges," J. Phys. IV France, 9, Pr8-837 (1999).
-
(1999)
J. Phys. IV France
, vol.9
-
-
Leskela, M.1
Ritala, M.2
-
54
-
-
0032027307
-
In Situ Investigation of the Surface Chemistry of Atomic-Layer Epitaxial Growth of II-VI Semiconductor Thin Films
-
Luo, Y., Slater, D., Han, M., Moryl, J. and Osgood, R. M., "In Situ Investigation of the Surface Chemistry of Atomic-Layer Epitaxial Growth of II-VI Semiconductor Thin Films," Langmuir, 14, 1493 (1998).
-
(1998)
Langmuir
, vol.14
, pp. 1493
-
-
Luo, Y.1
Slater, D.2
Han, M.3
Moryl, J.4
Osgood, R.M.5
-
57
-
-
0034296258
-
The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metailorganic Atomic Layer Deposition of Ti-Si-N Thin Films
-
Min, J. S., Park, J. S., Park, H. S. and Kang S. W., "The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metailorganic Atomic Layer Deposition of Ti-Si-N Thin Films," J. Electrochem. Soc., 147, 3868 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 3868
-
-
Min, J.S.1
Park, J.S.2
Park, H.S.3
Kang, S.W.4
-
58
-
-
0032156058
-
Atomic Layer Deposition of TiN Films by Alternate Supply
-
Min, J. S., Son, S. W., Kang, W. G., Chun, S. S. and Kang, S. W., "Atomic Layer Deposition of TiN Films by Alternate Supply," Jpn. J. Appl. Phys., 37, 4999 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 4999
-
-
Min, J.S.1
Son, S.W.2
Kang, W.G.3
Chun, S.S.4
Kang, S.W.5
-
60
-
-
0035897237
-
Formation and Stability of Lanthanum Oxide Thin Films Deposited from -Diketonate Precursor
-
Nieminen, M., Putkonen, M. and Niinisto, L., "Formation and Stability of Lanthanum Oxide Thin Films Deposited from -Diketonate Precursor," Applied Surface Science, 174, 155 (2001).
-
(2001)
Applied Surface Science
, vol.174
, pp. 155
-
-
Nieminen, M.1
Putkonen, M.2
Niinisto, L.3
-
61
-
-
0041822817
-
Synthesis of Oxide Thin Films and Overlayers By Atomic Layer Epitaxy for Advanced Applications
-
Niinisto, L., Ritala, M. and Leskela, M., "Synthesis of Oxide Thin Films and Overlayers By Atomic Layer Epitaxy for Advanced Applications," Materials science & Engineering B, 41, 23 (1996).
-
(1996)
Materials Science & Engineering B
, vol.41
, pp. 23
-
-
Niinisto, L.1
Ritala, M.2
Leskela, M.3
-
62
-
-
0032784780
-
Thin Film Deposition of Lanthanum Manganite Perovskite by the ALE Process
-
Nilsen, O., Peussa, M., Fjellvag, H., Niinisto, L. and Kjekshus, A., "Thin Film Deposition of Lanthanum Manganite Perovskite by the ALE Process," J. Mater. Chem., 9, 1781 (1999).
-
(1999)
J. Mater. Chem.
, vol.9
, pp. 1781
-
-
Nilsen, O.1
Peussa, M.2
Fjellvag, H.3
Niinisto, L.4
Kjekshus, A.5
-
64
-
-
0035323475
-
Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitride Using Hydrogen Radicals as a Reducing Agent
-
Park, J. S., Lee, M. J., Lee, C. S. and Kang, S. W., "Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitride Using Hydrogen Radicals as a Reducing Agent," Electrochemical and Solid-Stale Letters, 4, C17 (2001).
-
(2001)
Electrochemical and Solid-Stale Letters
, vol.4
-
-
Park, J.S.1
Lee, M.J.2
Lee, C.S.3
Kang, S.W.4
-
65
-
-
0035896875
-
2 Gate Dielectrics Grown by Atomic Layer Chemical Vapor Deposition
-
2 Gate Dielectrics Grown by Atomic Layer Chemical Vapor Deposition," Appl. Phys. Lett., 78, 2357 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2357
-
-
Perkins, C.M.1
Triplett, B.B.2
McLntype, P.C.3
Saraswat, K.C.4
Haukka, S.5
Tuominen, M.6
-
67
-
-
0034839628
-
In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water
-
Rahtu, A., Kukli, K. and Ritala, M., "In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water," Chem. Mater., 13, 817 (2001).
-
(2001)
Chem. Mater.
, vol.13
, pp. 817
-
-
Rahtu, A.1
Kukli, K.2
Ritala, M.3
-
68
-
-
0343390442
-
In Situ Characterization of Atomic Layer Deposition Process by a Mass Spectrometer
-
Ritala, M., Juppo, M., Kukli, K., Rahtu, A. and Leskela, M., "In Situ Characterization of Atomic Layer Deposition Process by a Mass Spectrometer," J. Phys. IV France, 9, Pr8-I021 (1999).
-
(1999)
J. Phys. IV France
, vol.9
-
-
Ritala, M.1
Juppo, M.2
Kukli, K.3
Rahtu, A.4
Leskela, M.5
-
69
-
-
0031546895
-
Advanced ALE Process of Amorphous and Polycrystalline Films
-
Ritala, M., "Advanced ALE Process of Amorphous and Polycrystalline Films," Applied Surface Science, 112, 223 (1997).
-
(1997)
Applied Surface Science
, vol.112
, pp. 223
-
-
Ritala, M.1
-
70
-
-
0034646723
-
Atomic Layer Deposition of Oxide Thin Films With Metal Alkoxides as Oxygen Sources
-
Ritala, M., Kukli, K., Rahtu, A., Raisanen, P. I., Leskela, M., Sajavaara, T. and Keinonen, J., "Atomic Layer Deposition of Oxide Thin Films With Metal Alkoxides as Oxygen Sources," Science, 288, 319 (2000).
-
(2000)
Science
, vol.288
, pp. 319
-
-
Ritala, M.1
Kukli, K.2
Rahtu, A.3
Raisanen, P.I.4
Leskela, M.5
Sajavaara, T.6
Keinonen, J.7
-
71
-
-
0032682630
-
Atomic Layer Epitaxy-a Valuable Tool for Nanotechnology?
-
Ritala, M. and Leskela, M., "Atomic Layer Epitaxy-a Valuable Tool for Nanotechnology?," Nanotechnology, 10, 19 (1999).
-
(1999)
Nanotechnology
, vol.10
, pp. 19
-
-
Ritala, M.1
Leskela, M.2
-
72
-
-
0028517695
-
Development of Crystallinity and Morphology in Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy
-
Ritala, M. and Leskela, M., "Development of Crystallinity and Morphology in Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy," Thin Solid Films, 250, 72 (1994).
-
(1994)
Thin Solid Films
, vol.250
, pp. 72
-
-
Ritala, M.1
Leskela, M.2
-
73
-
-
0000646519
-
Titanium Iso propoxide as a Precursor in Atomic Layer Epitaxy of Titanium Oxide Thin Films
-
Ritala, M., Leskela, M., Niinisto, L. and Haussalo, P., "Titanium Iso propoxide as a Precursor in Atomic Layer Epitaxy of Titanium Oxide Thin Films," Chem. Mater., 5, 1174 (1994).
-
(1994)
Chem. Mater.
, vol.5
, pp. 1174
-
-
Ritala, M.1
Leskela, M.2
Niinisto, L.3
Haussalo, P.4
-
75
-
-
0030233425
-
3 Thin Films Grown by Atomic Layer Epitaxy
-
3 Thin Films Grown by Atomic Layer Epitaxy," Thin Solid Films, 286, 54 (1996).
-
(1996)
Thin Solid Films
, vol.286
, pp. 54
-
-
Ritala, M.1
Saloniemi, H.2
Leskela, M.3
Prohaska, T.4
Friedbacher, Ge.5
Grasserbauer, M.6
-
76
-
-
0032182068
-
Highly Stable ZnO Thin Films by Atomic Layer Deposition
-
Sang, B., Yamada, A. and Konagai, M., "Highly Stable ZnO Thin Films by Atomic Layer Deposition," J. Appl. Phys., 37, L1125 (1998).
-
(1998)
J. Appl. Phys.
, vol.37
-
-
Sang, B.1
Yamada, A.2
Konagai, M.3
-
77
-
-
0032000824
-
Textured ZnO Thin Films for Solar Cells Grown by a Two-Step Process with the Atomic Layer Deposition Technique
-
Sang, B., Yamada, A. and Konagai, M., "Textured ZnO Thin Films for Solar Cells Grown by a Two-Step Process with the Atomic Layer Deposition Technique," Jpn. J. Appl. Phys., 37, L206 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
-
-
Sang, B.1
Yamada, A.2
Konagai, M.3
-
78
-
-
0034272551
-
2 Low Temperature Epitaxy of Rutile and Anatase
-
2 Low Temperature Epitaxy of Rutile and Anatase," J. Electrochem. Soc., 147, 3319 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 3319
-
-
Schuisky, M.1
Harsta, A.2
Kukli, K.3
Kiisler, A.A.4
Aarik, J.5
-
79
-
-
0001074791
-
3 Thin Films in an Atomic Layer Epitaxy Reactors
-
3 Thin Films in an Atomic Layer Epitaxy Reactors," J. Mater. Chem., 7, 449 (1997).
-
(1997)
J. Mater. Chem.
, vol.7
, pp. 449
-
-
Seim, H.1
Molsa, H.2
Nieminen, M.3
Fjellvag, H.4
Niinisto, L.5
-
80
-
-
0034294315
-
Atomic Layer Deposition of Copper Seed Layers
-
Solanki, R and Pathangey, B., "Atomic Layer Deposition of Copper Seed Layers," Electrochemical and Solid-State Letters, 3, 479 (2000).
-
(2000)
Electrochemical and Solid-State Letters
, vol.3
, pp. 479
-
-
Solanki, R.1
Pathangey, B.2
-
82
-
-
0002572435
-
Atomic Layer Epitaxy
-
Suntola, T., "Atomic Layer Epitaxy," Thin Solid Films, 216, 84 (1992).
-
(1992)
Thin Solid Films
, vol.216
, pp. 84
-
-
Suntola, T.1
-
84
-
-
0030564312
-
Surface Chemistry of Materials Deposition at Atomic Layer Level
-
Suntola, T., "Surface Chemistry of Materials Deposition at Atomic Layer Level," Applied Surface Science, 100-101, 391 (1996).
-
(1996)
Applied Surface Science
, vol.100-101
, pp. 391
-
-
Suntola, T.1
-
86
-
-
0032156630
-
Preperation and Characterization of Phosphorus-Doped Aluminum Oxide Thin Films
-
Tiitta, M., Nykanen, E., Soininen, P., Niinisto, L., Leskela, M. and Lappalainen, R., "Preperation and Characterization of Phosphorus-Doped Aluminum Oxide Thin Films," Materials Research Bulletin, 33, 1315 (1998).
-
(1998)
Materials Research Bulletin
, vol.33
, pp. 1315
-
-
Tiitta, M.1
Nykanen, E.2
Soininen, P.3
Niinisto, L.4
Leskela, M.5
Lappalainen, R.6
-
87
-
-
0342323747
-
2 (M=Ni, Cu, Pt) Precursors
-
2 (M=Ni, Cu, Pt) Precursors," Applied Surface Science, 157, 151 (2000).
-
(2000)
Applied Surface Science
, vol.157
, pp. 151
-
-
Utriainen, M.1
Laukkanen, M.K.2
Johansson, L.S.3
Niinisto, L.4
-
88
-
-
0032594211
-
3 Thin Films by Atomic Layer Deposition
-
3 Thin Films by Atomic Layer Deposition," Electrochemical and Solid-state letters, 2, 504 (1999).
-
(1999)
Electrochemical and Solid-state Letters
, vol.2
, pp. 504
-
-
Vehkamaki, M.1
Hatanpaa, T.2
Hanninen, T.3
Ritala, M.4
Leskela, M.5
-
89
-
-
0031546852
-
Atomic Layer Deposition of ZnO Transparent Conducting Oxides
-
Yamada, A., Sang, B. and Konagai, M., "Atomic Layer Deposition of ZnO Transparent Conducting Oxides," Applied Surface Science, 112, 216 (1997).
-
(1997)
Applied Surface Science
, vol.112
, pp. 216
-
-
Yamada, A.1
Sang, B.2
Konagai, M.3
-
90
-
-
0037479200
-
Atomic Layer by Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring
-
Yamamoto, S. and Oda, S., "Atomic Layer by Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring," Chem. Vap. Deposition, 7, 7 (2001).
-
(2001)
Chem. Vap. Deposition
, vol.7
, pp. 7
-
-
Yamamoto, S.1
Oda, S.2
-
91
-
-
0034531548
-
+poly Si Interface Deposited Using Atomic Layer Deposition (ALD) for Deep Submicron Device Application
-
+poly Si Interface Deposited Using Atomic Layer Deposition (ALD) for Deep Submicron Device Application," Surface & Coating Technology, 131, 79 (2000).
-
(2000)
Surface & Coating Technology
, vol.131
, pp. 79
-
-
Yang, W.S.1
Kim, Y.K.2
Yang, S.Y.3
Choi, J.H.4
Park, H.S.5
Lee, S.I.6
Yoo, J.B.7
-
92
-
-
0030167492
-
Monolayer Thickness in Atomic Layer Deposition
-
Ylliammi, M., "Monolayer Thickness in Atomic Layer Deposition, " Thin Solid Films, 279, 124 (1996).
-
(1996)
Thin Solid Films
, vol.279
, pp. 124
-
-
Ylliammi, M.1
-
93
-
-
0033886407
-
Study of Atomic Layer Epitaxy of Zinc Oxide by In-Situ Quartz Crystal Microgravimetry
-
Yousfi, E. B., Fouache, J. and Lincot, D., "Study of Atomic Layer Epitaxy of Zinc Oxide by In-Situ Quartz Crystal Microgravimetry," Applied Surface Science, 153, 223 (2000).
-
(2000)
Applied Surface Science
, vol.153
, pp. 223
-
-
Yousfi, E.B.1
Fouache, J.2
Lincot, D.3
-
94
-
-
0031553457
-
Experimental and Theoretical Study of Step Coverage in Metal Organic Chemical Vapor Deposition of Tantalum Oxide Thin Film
-
Yun, J. H. and Rhee, S. W., "Experimental and Theoretical Study of Step Coverage in Metal Organic Chemical Vapor Deposition of Tantalum Oxide Thin Film," Thin Solid Films, 292, 324 (1997).
-
(1997)
Thin Solid Films
, vol.292
, pp. 324
-
-
Yun, J.H.1
Rhee, S.W.2
-
95
-
-
0032681877
-
Comparison of Tetrakis-dimethyl-amido-titanium and Tetrakis-diethyl-amido-titanium Precursor Used in Titanium Nitride (TiN) Metal-Organic Chemical Vapor Deposition
-
Yun, J. Y., Park, M. Y. and Rhee, S. W., "Comparison of Tetrakis-dimethyl-amido-titanium and Tetrakis-diethyl-amido-titanium Precursor Used in Titanium Nitride (TiN) Metal-Organic Chemical Vapor Deposition," J. Electrochem. Soc., 146, 1804 (1999).
-
(1999)
J. Electrochem. Soc.
, vol.146
, pp. 1804
-
-
Yun, J.Y.1
Park, M.Y.2
Rhee, S.W.3
-
96
-
-
0000364381
-
3
-
3," J. Vac. Sci. Technol. A, 15, 2993 (1997).
-
(1997)
J. Vac. Sci. Technol. A
, vol.15
, pp. 2993
-
-
Yun, S.I.1
Lee, K.H.2
Skarp, J.3
Kim, H.R.4
Nam, K.S.5
-
97
-
-
0002305629
-
Atomic Layer Deposition of High Dielectric Constant Nanolaminates
-
Zhang, H. and Solanki, R., "Atomic Layer Deposition of High Dielectric Constant Nanolaminates," J. Electrochem. Soc., 148, F63 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
-
-
Zhang, H.1
Solanki, R.2
-
98
-
-
0000666935
-
High Permittivity Thin Nanolaminates
-
Zhang, H., Solanki, R., Roberds, B., Bai, G. and Banerjee, I., "High Permittivity Thin Nanolaminates," J. Appl. Phys., 87, 1921 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 1921
-
-
Zhang, H.1
Solanki, R.2
Roberds, B.3
Bai, G.4
Banerjee, I.5
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