Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate

Korean Journal of Chemical Engineering

Volumn 21, Issue 6, 2004, Pages 1240-1244

  Lee, Kyung Sun ^a   Lee, Seung Hyun ^a   Mo, Young Hwan ^a   Nahm, Kee Suk ^a   Kim, Ju Jin ^b   Lee, Choong Hun ^b  

^a Chonbuk National University   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

C coated NiSi Nanowires; Catalytic CVD Growth; Electrical Properties of Nanowires

Indexed keywords

CARBON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; NICKEL COMPOUNDS; NUCLEATION; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES;

CARBON COATED NICKEL SILICIDE NANOWIRES (C-COATED NISI NANOWIRES); CATALYTIC CVD GROWTH; ELECTRICAL PROPERTIES OF NANOWIRES; FOWLER-NORDHEIM (F-N) PLOTS;

NANOSTRUCTURED MATERIALS;

EID: 13444271713     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02719501     Document Type: Article

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