I-V characteristics of structures with porous silicon in electrolyte

Optical Materials

Volumn 27, Issue 5, 2005, Pages 962-966

  Mkhitaryan, Z H ^a   Shatveryan, A A ^a   Adamyan, A Z ^a   Aroutiounian, V M ^a  

^a YEREVAN STATE UNIVERSITY   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTROLYTES; HYSTERESIS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION;

CURRENT-VOLTAGE CHARACTERISTICS (CVC); ELECTROCHEMICAL ANODIZATIONS; ELECTROLYTIC CONTACT (EC); SOLID-STATE CONTACT (SSC);

POROUS SILICON;

EID: 13444263681     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.044     Document Type: Conference Paper

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