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Volumn 23, Issue 6, 1997, Pages 440-442

Hysteresis of the current-voltage characteristics of porous-silicon light-emitting structures

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[No Author keywords available]

Indexed keywords


EID: 0031490972     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1261706     Document Type: Article
Times cited : (6)

References (13)
  • 5
    • 0039906845 scopus 로고
    • S. P. Zimin, V. S. Kuznetsov, N. V. Perch, and A. V. Prokaznikov, Pis'ma Zh. Tekh. Fiz. 20(22), 22 (1994) [Tech. Phys. Lett. 20, 899 (1994)].
    • (1994) Tech. Phys. Lett. , vol.20 , pp. 899
  • 7
    • 30944449157 scopus 로고
    • L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, and I. D. Yaroshetskiǐ, Fiz. Tekh. Poluprovodn. 27, 1815 (1993) [Semiconductors 27, 999 (1993)].
    • (1993) Semiconductors , vol.27 , pp. 999
  • 9
    • 0004005306 scopus 로고
    • Wiley, New York, Russ. transl., Énergiya, Moscow, 1963
    • S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969) [Russ. transl., Énergiya, Moscow, 1963].
    • (1969) Physics of Semiconductor Devices
    • Sze, S.M.1
  • 13
    • 0039906843 scopus 로고
    • A. B. Matveeva, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. 29, 2180 (1995) [Semiconductors 29, 1146 (1995)].
    • (1995) Semiconductors , vol.29 , pp. 1146


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.