Investigation of vacancy in C54 TiSi2 using ab initio method

Materials Letters

Volumn 59, Issue 8-9, 2005, Pages 885-888

  Wang, T ^a   Dai, Y B ^a   Ouyang, S K ^a   Shen, H S ^a   Wang, Q K ^a   Wu, J S ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Ab initio; Silicide; Vacancy

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; CORRELATION METHODS; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; LATTICE CONSTANTS; OPTIMIZATION; SILICON;

AB INITIO; ELECTRONIC CONDUCTION; SILICIDE; VACANCY;

TITANIUM COMPOUNDS;

EID: 13444263600     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.11.038     Document Type: Article

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