HVEM study of crack-tip dislocations in Si crystals prepared by FIB and twin-blade cutting method

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 505-509

  Tanaka, Masaki ^a   Higashida, Kenji ^a   Fukui, Toru ^a,b   Yokote, Tatsuo ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Hinode Clinic   (Japan)

Author keywords

Crack; Dislocation; Focused ion beam; Fracture; High voltage electron microscopy; Twin blade cutting method

Indexed keywords

SILICON;

ARTICLE; CRYSTALLIZATION; EQUIPMENT; LABORATORY DIAGNOSIS; METHODOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION; EQUIPMENT FAILURE ANALYSIS; MICROSCOPY, ELECTRON, TRANSMISSION; SILICON; SPECIMEN HANDLING;

CRACK PROPAGATION; CRACK TIPS; CUTTING TOOLS; DISLOCATIONS (CRYSTALS); DUCTILE FRACTURE; FRACTURE TOUGHNESS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON;

CRACK TIP DISLOCATIONS; CUTTING METHODS; DISLOCATION; FOCUSED IONS BEAMS; HIGH VOLTAGE ELECTRON MICROSCOPY; HIGHEST TEMPERATURE; SI CRYSTALS; SILICON CRYSTAL; TWIN-BLADE CUTTING METHOD; VICKERS INDENTATION METHOD;

FOCUSED ION BEAMS;

EID: 13444250063     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh052     Document Type: Article

References (10)

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