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Volumn 201, Issue 2, 2004, Pages 329-332

Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL RELAXATION; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; MONOLAYERS; OPTICAL WAVEGUIDES; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

EID: 1342347517     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303968     Document Type: Conference Paper
Times cited : (1)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.