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Volumn 201, Issue 2, 2004, Pages 329-332
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Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD
a
UNIV PARIS SUD
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL RELAXATION;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
EPITAXIAL GROWTH;
LATTICE CONSTANTS;
MONOLAYERS;
OPTICAL WAVEGUIDES;
REACTION KINETICS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRAHIGH VACUUM;
X RAY DIFFRACTION ANALYSIS;
FILM THICKNESS;
STRANSKI-KRASTANOV GROWTH;
SEMICONDUCTING GERMANIUM;
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EID: 1342347517
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200303968 Document Type: Conference Paper |
Times cited : (1)
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References (11)
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