N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering

Physica Status Solidi (B) Basic Research

Volumn 235, Issue 1, 2003, Pages 111-114

  Ohmura, Y ^a   Takahashi, M ^a   Suzuki, M ^a   Emura, A ^a   Sakamoto, N ^a   Meguro, T ^b   Yamamoto, Y ^c  

^a IWAKI MEISEI UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; IMPURITIES; MASS SPECTROMETRY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON WAFERS; SPECTROPHOTOMETERS; SPUTTERING; THIN FILMS;

ABSORPTION COEFFICIENTS; BAND GAPS; REACTIVE RADIO-FREQUENCY (RF) CO-SPUTTERING;

AMORPHOUS SILICON;

EID: 1342326307     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200301537     Document Type: Conference Paper

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