The effects of Tl impurities on the properties of amorphous SiC:H films prepared by co-sputtering

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 302-304

  Saito, N ^a   Inui, Y ^b   Yamaguchi, T ^b   Nakaaki, I ^c  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c Shizuoka Industrial Research Institute of Shizuoka Prefecture   (Japan)

Author keywords

Amorphous materials; Impurities; Sputtering; Thallium

Indexed keywords

AMORPHOUS FILMS; BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGEN; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; QUENCHING; SILICON CARBIDE; SPUTTER DEPOSITION; SPUTTERING; THALLIUM;

CO SPUTTERING; CONDUCTION SHIFTS; OPTOELECTRONIC PROPERTIES;

CRYSTAL IMPURITIES;

EID: 0030218632     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08662-2     Document Type: Article

References (6)

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