P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 257-260

  Ohmura, Y ^a   Takahashi, M ^a   Suzuki, M ^a   Sakamoto, N ^a   Meguro, T ^b  

^a IWAKI MEISEI UNIVERSITY   (Japan)

^b RIKEN   (Japan)

Author keywords

Boron; Doping; Hydrogenated amorphous silicon; Sputtering

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; BORON; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FERMI LEVEL; HETEROJUNCTIONS; HYDROGENATION; PHOTOVOLTAIC EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON WAFERS; SPUTTERING;

RADIO FREQUENCY CO-SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0035675142     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00785-2     Document Type: Article

References (11)