Optimization of 635-nm Tensile Strained GaInP Laser Diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1246-1251

  Smowton, Peter M ^a   Lewis, Gareth M ^a   Blood, Peter ^a   Chow, Weng W ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Characterization; Gain measurement; Gain spectra; Laser modeling; Quantum well lasers; Semiconductor laser; Spontaneous emission; Strain

Indexed keywords

BAND STRUCTURE; CHARACTERIZATION; CURRENT DENSITY; FERMI LEVEL; GAIN MEASUREMENT; OPTIMIZATION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; STRAIN;

GAIN SPECTRA; LASER MODELING; TENSILE STRAIN;

QUANTUM WELL LASERS;

EID: 1342324882     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819488     Document Type: Conference Paper

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