Zn concentration determination in CdZnTe by NIR spectroscopy

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 427-434

  Maxey, C D ^a   Gower, J E ^a   Capper, P ^a   O'Keefe, E S ^a,c   Skauli, T ^b   Ard, C K ^d  

^a GEC Marconi Infrared Limited   (United Kingdom)

^b NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

^c DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^d NONE

Author keywords

CdZnTe; Near infrared spectroscopy; Substrate screening

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; LATTICE CONSTANTS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY; ZINC;

ABSORPTION COEFFICIENT;

SEMICONDUCTING FILMS;

EID: 0033514181     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00741-6     Document Type: Article

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