Bias voltage dependence of magnetocurrent in magnetic tunnel transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 1, 2004, Pages

  Jiang, Xin ^a,b,c   Van Dijken, Sebastiaan ^a   Wang, Roger ^a,b   Parkin, Stuart S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; GALLIUM ARSENIDE; SILICON;

ARTICLE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENERGY TRANSFER; MAGNETISM; SEMICONDUCTOR;

EID: 1342280578     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.014413     Document Type: Article

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