Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 155-159

  Usuda, Koji ^a   Numata, Toshinori ^a   Takagi, Shinichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Diffraction; Electron beam; SiGe; Silicon devices; Strain

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON BEAMS; ELECTRON DIFFRACTION; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

SIGE; SILICON DEVICES; STRAINED-SI;

SEMICONDUCTING FILMS;

EID: 13244296996     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.105     Document Type: Conference Paper

References (5)

1. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology Electron Device Lett 21 2000 230
2. J. Welser, J.L. Hoyt, and J.F. Gibbons Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors Electron Device Lett 15 1994 100
3. Usuda K, Numata T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S, Takagi S. Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD). In: IEEE International SOI Conference Proceedings; 2003. p. 138.
4. K. Usuda, T. Mizuno, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Nakaharai, and S. Takagi Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation Appl Surf Sci 224 2004 113
5. Anastassakis. In: Light scattering in semiconductor structures and superlattices.