High reflectance of reflective-type attenuated-phase-shifting masks for extreme ultraviolet lithography with high inspection contrast in deep ultraviolet regimes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3049-3052

  Chen, H L ^a   Cheng, H C ^b   Ko, T S ^c   Ko, F H ^b   Chu, T C ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC ATTENUATORS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FABRY-PEROT INTERFEROMETERS; ION BEAMS; LITHOGRAPHY; MULTILAYERS; PHASE SHIFT; SEMICONDUCTOR MATERIALS; THIN FILMS;

ELECTRON-BEAM PATTERNING; MASK LAYERS; MULTILAYER MIRRORS; PHASE-SHIFTING MASKS;

MASKS;

EID: 13244255813     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1813450     Document Type: Conference Paper

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