Manipulation experiments on Si (111) 7 × 7 by scanning tunnelling microscopy

Surface and Interface Analysis

Volumn 37, Issue 2, 2005, Pages 96-100

  Kraus, A ^a   Hanbucken M ^b   Koshikawa, T ^c   Neddermeyer, H ^d  

^a Biotronik GmbH and Co KG   (Germany)

^b CAMPUS DE LUMINY   (France)

^c OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^d MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Desorption; H covered Si(111)7 7; Manipulation; Scanning tunnelling microscopy; Si(111)7 7

Indexed keywords

DESORPTION; ELECTRIC POTENTIAL; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACES; THERMAL EFFECTS;

ATOMIC DISTANCE; H-COVERED SI(111)7×7; MANIPULATION; SI(111)7×7;

SURFACE PHENOMENA;

EID: 13244253632     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1940     Document Type: Conference Paper

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