Urbach rule used to explain the variation of the absorption edge in CdGeAs2 crystals

Journal of Physics Condensed Matter

Volumn 17, Issue 3, 2005, Pages 549-558

  Bai, Lihua ^a   Xu, Chunchuan ^a   Schunemann, P G ^b   Nagashio, K ^c   Feigelson, R S ^c   Giles, N C ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b BAE SYSTEMS   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ENERGY GAP; HALL EFFECT; INFRARED SPECTROMETERS; LUMINESCENCE; MATHEMATICAL MODELS; NONLINEAR OPTICS; PHONONS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

BAND GAP; CONDUCTION BAND; HOLE CONCENTRATION; INFRARED FREQUENCIES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 13144266752     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/3/013     Document Type: Article

References (36)

1. Schunemann P G and Pollak T M 1997 J. Cryst. Growth 174 272
2. Schunemann P G and Pollak TM 1997 Method for growing crystals US Patent Specification 5,611,856
3. Schunemann P G and Pollak T M 1998 Mater. Res. Soc. Bull. 23 23
4. Schunemann P G, Setzler S D, Pollak T M, Ptak A J and Myers T H 2001 J. Cryst. Growth 225 440
5. Nagashio K, Watcharapasorn A, Zawilski K T, DeMattei R C, Feigelson R S, Bai L, Giles N C, Halliburton L E and Schunemann P G 2004 J. Cryst. Growth 269 195
6. Shileika A 1973 Surf. Sci. 37 730
7. Akimchenko I P, Ivanov V S and Borshchevskii AS 1973 Sov. Phys. - Semicond. 7 309
8. Rud Yu V and Tairov M A 1974 Sov. Phys.-Semicond. 8 801
9. Borshchevskii A S, Valov Yu A, Goryunova N A, Osmanov E O, Ryvkin S M and Shpen'kov G P 1969 Sov. Phys. - Semicond. 2 1145
10. Akimchenko I P, Borshchevskii A S and Ivanov V S 1973 Sov. Phys. - Semicond. 7 98
11. Shay J L and Wernick J H 1975 Tenary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications (New York: Pergamon)
12. Urbach F 1953 Phys. Rev. 92 1324
13. Chichibu S, Mizutani T, Shioda T and Nakanishi H 1997 Appl. Phys. Lett. 70 3440
14. Abay B, Guder H S, Efeoglu H and Yogurtcu Y K 1998 J. Appl. Phys. 84 3872
15. Medvedkin G A, Rud Yu V and Tairov M A 1989 Phys. Status Solidi a 111 289
16. Redfield D and Afromowitz M A 1967 Appl. Phys. Lett. 11 138
17. Johnson S R and Tiedje T 1995 J. Appl. Phys. 78 5609
18. Rincon C, Wasim S M, Marin G, Marquez R, Nieves L, Sanchez Perez G and Medina E 2001 J. Appl. Phys. 90 4423
19. He T, Ehrhart P and Meuffels P 1996 J. Appl. Phys. 79 3219
20. Dow J D and Redfield D 1972 Phys. Rev. B 5 594
21. Sumi H and Toyozawa Y 1971 J. Phys. Soc. Japan 31 342
22. Schreiber M and Toyozawa Y 1982 J. Phys. Soc. Japan 51 1544
23. Cody G D, Tiedje T, Abeles B, Brooks B and Goldstein Y 1981 Phys. Rev. Lett. 47 1480
24. Ptak A J, Jain S, Stevens K T, Myers T H, Schunemann P G, Setzier S D and Pollak T M 2000 Mater. Res. Soc. Symp. Proc. 607 427
25. Pankove J I 1971 Optical Processes in Semiconductors (New York: Dover)
26. Bai L, Giles N C, Schunemann P G, Pollak T M, Nagashio K and Feigelson R S 2004 J. Appl. Phys. 95 4840
27. Bai L, Garces N Y, Yang N, Schunemann P G, Setzier S D, Pollak T M, Halliburton L E and Giles N C 2003 Mater. Res. Soc. Proc. 744 537
28. Hong K S, Speyer R F and Condrate R A Sr 1990 J. Phys. Chem. Solids 51 969
29. Mamedov B Kh and Osmanov E O 1972 Sov. Phys. - Semicond. 5 1120
30. Bai L, Poston J A Jr, Schunemann P G, Nagashio K, Feigelson R S and Giles N C 2004 J. Phys.: Condens. Matter 16 1279
31. Kurik M V 1971 Phys. Status Solidi a 8 9
32. Pascual J, Pujol J, Artus L and Camassel J 1991 Phys. Rev. B 43 9831
33. Abtropova E V, Kopytov A V and Poplavnoi A S 1988 Opt. Spectrosc. (USSR) 64 766
34. Brada Y and Roth M 1989 Phys. Rev. B 39 10402
35. 2 PhD Dissertation West Virginia University, chapter 2
36. Cody G D 1984 Semiconductors and Semimetals part B, vol 21, ed J I Pankove (New York: Academic) chapter 2