Temperature dependent Hall measurements made on CdGeAs2

Materials Research Society Symposium - Proceedings

Volumn 607, Issue , 2000, Pages 427-432

  Ptak, A J ^a   Jain, S ^b   Stevens, K T ^a   Myers, T H ^b   Schunemann, P G ^a   Setzler, S D ^b   Pollak, T M ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ACTIVATION ENERGY; ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY MEASUREMENT; HALL EFFECT; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CADMIUM GERMANIUM ARSENIDE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0033699543     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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5. See, for example, N.W. Ashcroft and N.D. Mermin, Solid State Physics (Saunders College Publishers, New York, 1976), p. 586.
6. See, for example, R.H. Bube, Electronic Properties of Crystalline Solids (Academic Press, New York, 1974), p.364.
7. See, for example, J.P. McKelvey, Solid State Physics for Engineering and Materials Science (Krieger Publishing Company, Malabar, Florida, 1993), p. 388.
8. S.I. Borisenko and G.F. Karavaev, Izv. Vyssh. Uchebn. Zaved., Fiz. 1, 68 (1982). IssN0021-3411.
9. See, for example, R.H. Bube, Electronic Properties of Crystalline Solids (Academic Press, New York, 1974), p.311.