Correlation between dislocation etch pits and optical absorption in CdGeAs2

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 195-206

  Nagashio, K ^a,d   Watcharapasorn, A ^a,e   Zawilski, K T ^a,c   DeMattei, R C ^a   Feigelson, R S ^a   Bai, L ^b   Giles, N C ^b   Halliburton, L E ^b   Schunemann, P G ^c  

^a STANFORD UNIVERSITY   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c BAE SYSTEMS   (United States)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^e CHIANG MAI UNIVERSITY   (Thailand)

Author keywords

Etching; Gradient freeze technique; Nonlinear optical materials; Semiconducting ternary compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; INFRARED TRANSMISSION; LIGHT ABSORPTION; NONLINEAR OPTICS; SECOND HARMONIC GENERATION; SINGLE CRYSTALS; TERNARY SYSTEMS;

GRADIENT FREEZE TECHNIQUE; GROWTH ORIENTATION; NONLINEAR OPTICAL MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS;

CADMIUM COMPOUNDS;

EID: 4344576432     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.116     Document Type: Article

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