Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition

Europhysics Letters

Volumn 36, Issue 7, 1996, Pages 527-532

  Blaschette, A ^a   Ruzzu, A ^a   Wagner, S ^a   V Lohneysen H ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030492675     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1996-00264-2     Document Type: Article

References (18)

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9. THURBER W. R., MATTIS R. L., LIU Y. M. and FILLIBEN J. J., J. Electrochem. Soc., 127 (1980) 1807. There is an apparent mismatch of 7% between our concentration scale for Si:P and that used by Sarachik and coworkers (DAI P., ZHANG Y. and SARACHIK M. P., Phys. Rev. B, 48 (1993) 4941) when comparing the resistivity ratio R(4.2 K)/R(295 K) and the conductivity σ(T → 0). This unresolved discrepancy does not, however, affect any of the issues or main conclusions of the present paper.
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