Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Bahng, Wook ^a,b   Kitou, Yasuo ^a   Nishizawa, Shin Ichi ^b   Yamaguchi, Hirotaka ^b   Khan, Muhammad Nasir ^b   Oyanagi, Naoki ^a   Arai, Kazuo ^b   Nishino, Shigehiro ^c  

^a R and D Assoc Fut Electron Devices   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); GRAPHITE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

LATERAL GROWTH; PHYSICAL VAPOR TRANSPORT (PVT);

SILICON CARBIDE;

EID: 12944317285     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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