Chemistry and physics of the PEB process in a CA resist

Solid State Technology

Volumn 43, Issue 8 SUPPL., 2000, Pages 95-102

  Hinsberg, William ^a   Hoffnagle, John ^a   Houle, Frances ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 12944286809     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (10)

1. H. Ito, IBM J. Res. Devel., 41, 69, 1997.
2. R. Dammel, Diazonaphthoquinone-based Resists, Bellingham, WA, SPIE Optical Engineering Press, 1993.
3. G. Wallraff et al., SPIE Advances in Resist Technology and Processing XVI, 3678, 138, 1999.
4. G. Wallraff, J. Hutchinson, et al., Vac. Sci. Tech. (B), 12, 3857, 1994.
5. The chemical kinetics model, using stochastic kinetics simulations methods, is described in detail in reference 4. The application of stochastic methods in simulation of transport kinetics is described in F. Houle, W. Hinsberg, Applied Physics A, 66, 143, 1998.
6. The combination of these two for the present study is detailed in a manuscript submitted to J. Vac. Sci. Tech. B.
7. H. Ito, M. Sherwood, SPIE Advances in Resist Technology and Processing XVI, 3678, 104, 1999.
8. H. Ito, M. Sherwood, J. Photopolym. Sci. Tech., 12, 625, 1999.
9. The MS ionization source is described in B. Prime, B. Shushan, Anal. Chem., 61, 1195, 1989.
10. Full details of the instrumentation and experimental method are contained in F. Houle, G. Poliskie, W. Hinsberg, D. Pearson, M. Sanchez, SPIE Advances in Resist Technology and Processing XVI, 3999, in press, 2000.