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Materials Science Forum

Volumn 338, Issue , 2000, Pages

Shape of SiC bulk single crystal grown by sublimation

(6) Nishizawa, Shin Ichi a Kitou, Yasuo b Bahng, Wook a Oyanagi, Naoki b Khan, Muhammad Nasir a Arai, Kazuo a

a ELECTROTECHNICAL LABORATORY (Japan)

b R and D Assoc Fut Electron Devices (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTROMAGNETIC FIELDS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBLIMATION; TEMPERATURE DISTRIBUTION; THERMAL GRADIENTS;

TEMPERATURE FIELDS;

SILICON CARBIDE;

EID: 12944286623 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (11)

References (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.